MMBT2222

MMBT2222

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    MMBT2222 - NPN General Purpose Transistors - Weitron Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT2222 数据手册
MMBT2222 MMBT2222A 3 1 SOT-23 VCEO 2 u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc, TA=-55 C) (IC=150 mAdc, VCE=10 Vdc) (3) (IC=150 mAdc, VCE=1.0Vdc) (3) (IC=500 mAdc, VCE=10 Vdc) (3) Collector-Emitter Saturation Voltage (3) (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (3) (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) 0.6 300 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 Vdc Vdc MMBT2222A ONLY MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (4) (IC=20 mAdc, VCE=20 Vdc, f=100MHz) Output Capacitance ( VCB=10 Vdc, IE=0, f=1.0MHz) Input Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) Voltage Feeback Radio (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) S mall-S ignal C urrent G ain ( I C =1.0 mAdc, V C E =10V dc, f=1.0 kHz) ( I C =10 mAdc, V C E =10V dc, f=1.0 kHz) Output Admittance (IC=1.0 mAdc, VCE=10Vdc, f=-1.0kHz) (IC=10 mAdc, VCE=10Vdc, f=-1.0kHz) Collector Base Time Constant (IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz) Noise Figure (IC=100 µAdc, VCE=10Vdc, RS=1.0kΩ, f=1.0kHz) MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A rb, Cc NF hfe 50 75 hoe 5.0 25 35 200 150 4.0 ps dB fT Cobo Cibo hie hre 250 300 2.0 0.25 8.0 30 25 8.0 1.25 8.0 4.0 300 375 MHz pF pF kΩ x 10-4 µmhos WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC=30 Vdc, VBE=(off )=-0.5Vdc, IC=150 mAdc, IB1=15 mAdc) (VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc) td tr ts tf 10 25 225 60 ns ns _ _ 3.Pulse Test:Pulse Width < 300 µs, Duty Cycle < 2.0%. 4.fT is defined as the frequency at which Ihfe extrapolates to unity. Typical Characteristics hFE-TYPICAL PULSED CURRENT GAIN 500 VCE=5V 400 300 200 25 C 100 -40 C 0 0.1 0.3 1 3 10 30 Ic-COLLECTOR CURRENT (mA) 100 300 125 C VCESAT COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector- Emitter Saturation Voltage vs Collector Current 0.4 b=10 0.3 125 C 25 C 0.1 -40 C 1 10 100 500 0.2 Ic-COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current VBESAT BASE-EMITTER VOLTAGE (V) 1 b=10 VBE(ON) BASE-EMITTER ON VOLTAGE (V) 1 Base-Emitter ON Voltage vs Collector Current VCE=5V 0.8 -40 C 0.6 25 C 0.8 -40 C 25 C 0.6 125 C 0.4 125 C 0.4 1 10 100 500 0.2 0.1 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A C0llector-Cutoff Current vs Ambient Temperature 500 Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 f=1MHz ICBO COLLECTOR CURRENT (nA) 100 10 VCB=40V CAPACITANCE(pF) 16 1 12 Cte 8 0.1 4 25 50 75 100 125 150 0.1 Cob 1 10 100 TA-AMBIENT TEMPERATURE ( C) REVERSE BIAS VOLTAGE (V) Turn On and Turn Off Times vs Collector Current 400 1 IB1=IB2= c 10 320 Vcc=25V 240 400 IB1=IB2= 320 Vcc=25V 1c 10 Switching Times vs Collector Current TIME (nS) TIME (nS) 240 ts tr tf td 0 160 tOFF tON 0 10 100 1000 160 80 80 10 100 1000 Ic-COLLECTOR CURRENT(mA) Ic-COLLECTOR CURRENT(mA) Power Dissipation vs Ambient Temperature 1 PD-POWER DISSIPATION (W) 0.75 0.5 SOT-23 0.25 0 0 25 50 75 100 125 150 TEMPERATURE( C) WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A SOT-23 Outline Dimensions Unit:mm A TOP VIEW B C E G H D K L J M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw
MMBT2222
### 物料型号 - 型号:MMBT2222 和 MMBT2222A

### 器件简介 - 简介:MMBT2222 和 MMBT2222A 是NPN型通用晶体管,适用于多种电子电路。

### 引脚分配 - SOT-23封装:发射极(Emitter)、基极(Base)、集电极(Collector)

### 参数特性 - 最大额定值: - 集电极-发射极击穿电压(VCEO):40V - 集电极-基极击穿电压(VCBO):75V - 发射极-基极击穿电压(VEBO):6V - 热特性: - 总器件耗散功率(PD):225mW(FR-5板),300mW(氧化铝基板) - 环境热阻(RθJA):556°C/W(FR-5板),417°C/W(氧化铝基板)

### 功能详解 - 电气特性: - 关断特性:包括集电极-发射极击穿电压、集电极-基极击穿电压等。 - 开启特性:包括直流电流增益(hFE)、集电极-发射极饱和电压等。 - 小信号特性:包括电流增益-带宽积(fT)、输出电容(Cob)等。 - 开关特性:包括延迟时间(td)、上升时间(tr)、存储时间(ts)、下降时间(tf)。

### 应用信息 - 应用:适用于需要NPN型晶体管的通用电子电路,如放大器、开关等。

### 封装信息 - SOT-23:具体尺寸和封装细节在文档中有详细图表说明。
MMBT2222 价格&库存

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