MMBT2222AT_10

MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon P b Lead(Pb)-Free 1 COLLECTOR 3 3 1 2 BASE 2 EMITTER SC-89 (SOT-523F) Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RθJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Base Cutoff Current ( VCE = 60 Vdc, VEB = 3.0 V) Collector Cutoff Current ( VCE = 60 Vdc, VEB = 3.0 V) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 20 100 V V V nA nA WEITRON http://www.weitron.com.tw 1/6 28-Apr-2010 MMBT2222AT ON CHARACTERISTICS2 DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector − Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base − Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 35 50 75 100 40 − − 0.6 − − − − − − 0.3 1.0 1.2 2.0 − VCE(sat) V VBE(sat) V SMALL−SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small − Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 − − 0.25 − 75 25 − − 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF k X 10− 4 − mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf − − − − 10 25 225 60 ns ns 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. WEITRON http://www.weitron.com.tw 2/6 28-Apr-2010 MMBT2222AT SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V 1.0 to 100µs, DUTY CYCLE ~ 2% ~ +30 V 200 + 16 V 0 + 16 V 0 1.0 to 100µs, DUTY CYCLE ~ 2% ~ 200 1.0 k C S* < 10 pF – 2.0V