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MMBT2222AW

MMBT2222AW

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    MMBT2222AW - NPN General Purpose Transistors - Weitron Technology

  • 数据手册
  • 价格&库存
MMBT2222AW 数据手册
MMBT2222AW 3 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0% WEITRON http://www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc) (IC=1.0 mAdc, VCE=10 Vdc) (IC=10 mAdc, VCE=10 Vdc) (IC=150mAdc, VCE=10 Vdc) (IC=500 mAdc, VCE=10 Vdc) Collector-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (IC=150 mAdc, IB=15mAdc) (IC=500 mAdc, IB=50mAdc) VCE(sat) 35 50 75 100 40 0.6 300 0.3 1.0 1.2 2.0 Vdc Vdc - hFE VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=20 mAdc, VCE=20 Vdc, f=100MHz) Output Capacitance (VCB=10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) Voltage Feeback Radio (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) S mall-S ignal C urrent G ain ( I C =10 mAdc, V C E =10V dc, f=1.0 kHz) Output Admittance (IC=10 mAdc, VCE=10Vdc, f=-1.0kHz) Collector Base Time Constant (IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz) Noise Figure (IC=100 µAdc, VCE=10Vdc, RS=1.0kΩ, f=1.0kHz) fT Cobo Cibo hie hre 300 0.25 75 25 8.0 25 1.25 4.0 375 200 150 4.0 MHz pF pF kΩ x 10-4 µmhos ps dB hfe hoe rb, Cc NF WEITRON http://www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC=30 Vdc, VBE=(off)=-0.5Vdc, IC=150 mAdc, IB1=15 mAdc) (VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc) td tr ts tf 10 25 225 60 ns ns 3.Pulse Test:Pulse Width< 300 µs, Duty Cycle< 2.0%. = = 4.fT is defined as the frequency at which Ihfe extrapolates to unity. Typical Characteristics hFE-TYPICAL PULSED CURRENT GAIN 500 VCE=5V 400 300 200 25 C 100 -40 C 0 0.1 0.3 1 3 10 30 Ic-COLLECTOR CURRENT (mA) 100 300 125 C VCESAT COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector- Emitter Saturation Voltage vs Collector Current 0.4 b=10 0.3 125 C 25 C 0.1 -40 C 1 10 100 500 0.2 Ic-COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current VBESAT BASE-EMITTER VOLTAGE (V) 1 b=10 VBE(ON) BASE-EMITTER ON VOLTAGE (V) 1 Base-Emitter ON Voltage vs Collector Current VCE=5V 0.8 -40 C 0.6 25 C 125 C 0.8 -40 C 25 C 0.6 125 C 0.4 0.4 1 10 100 500 0.2 0.1 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) WEITRON http://www.weitron.com.tw MMBT2222AW C0llector-Cutoff Current vs Ambient Temperature ICBO COLLECTOR CURRENT (nA) 500 100 10 1 0.1 VCB=40V 20 f=1MHz Emitter Transition and Output Capacitance vs Reverse Bias Voltage CAPACITANCE(pF) 16 12 8 4 Cob 0.1 1 10 100 Cte 25 50 75 100 125 150 TA-AMBIENT TEMPERATURE ( C) REVERSE BIAS VOLTAGE (V) Turn On and Turn Off Times vs Collector Current 400 320 400 1 IB1=IB2= c 10 Vcc=25V 240 160 80 tON 0 10 100 1000 tOFF IB1=IB2= 320 Switching Times vs Collector Current 1c 10 Vcc=25V TIME (nS) TIME (nS) 240 160 tr 80 0 tf td 10 100 1000 ts Ic-COLLECTOR CURRENT(mA) Ic-COLLECTOR CURRENT(mA) Power Dissipation vs Ambient Temperature 1 PD-POWER DISSIPATION (W) 0.75 0.5 SOT-23 0.25 0 0 25 50 75 100 125 150 TEMPERATURE( C) WEITRON http://www.weitron.com.tw MMBT2222AW http://www.weitron.com.tw WEITRON MMBT2222AW SOT-323 Outline Demensions Unit:mm A T OP V IE W B C D E G H K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw
MMBT2222AW 价格&库存

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MMBT2222AWT1G
  •  国内价格
  • 5+0.17982
  • 20+0.16386
  • 100+0.1479
  • 500+0.13194
  • 1000+0.12449
  • 2000+0.11917

库存:1057