MMBT2907AT

MMBT2907AT PNP General Purpose Transistors 1 COLLECTOR 3 3 1 2 BASE 2 SOT-523(SC-75) EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RθJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2907AT=2F ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) (2) Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Collector Cutoff Current (VCB= -50 Vdc, IE=0) Emitter Cutoff Current (VEB= -4 Vdc, IC=0) 1.FR-5=1.0 x 0.75 x 0.062 in _ 2. Pulse Test:Pulse Width=300 us, Duty Cycle < 2.0% V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -60 -60 -5.0 -10 -10 Vdc Vdc Vdc nAdc nAdc WEITRON http://www.weitron.com.tw MMBT2907AT ELECTRICAL CHARACTERISTICS ( Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = -0.1 mAdc, VCE= -10 Vdc) (I C = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, V CE = -10 Vdc) (IC = -150 mAdc, VCE= -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15mAdc) (IC = -500 mAdc, IB = -50mAdc) Base-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15mAdc) (I C= -500 mAdc, IB = -50mAdc) VCE(sat) hFE 75 100 100 100 50 - 300 - - -0.4 -1.6 -1.3 -2.6 Vdc VBE(sat) - - Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1) (IC = -2.0 mAdc, VCE=-12Vdc, f=30MHz) Output Capacitance ( VCB= -12 Vdc, IE =0, f=1.0MHz) fT CoBo - 140 - - MHz pF - 5.0 ELECTRICAL CHARACTERISTICS ( Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Out Time Storage Time Fall Time (VCC = -60 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc) (VCC = -30 Vdc, I C= -150 mAdc, IB1= -15 mAdc) t on - 45 10 40 100 80 30 ns td tr t off ts tf WEITRON http://www.weitron.com.tw MMBT2907AT hFE TYPICAL PULSED CURRENT GAIN VCEBAT COLLECTOR EMITTER VOLTAGE (V) 500 VCE=5V 400 300 200 100 0 0.1 0.3 1 3 10 30 100 300 25 C 125 C 0.5 b=10 0.4 0.3 25 C 0.2 0.1 0 1 10 100 500 125 C -40 C -40 C IC COLLECTOR CURRENT(mA) IC COLLECTOR CURRENT(mA) FIG.1 Typical Pulsed Current Gain vs Collector Current FIG.2 Collector-Emitter Saturation Voltage vs collector Current VBEON BASE EMITTER ON VOLTAGE (V) VBEST BASE EMITTER VOLTAGE (V) 1 0.8 0.6 0.4 0.2 0 0.1 VCE=5V 1 0.8 0.6 125 C 0.4 b=10 0.2 0 1 10 100 500 -40 C 25 C -40 C 25 C 125 C 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) FIG.3 Base-Emitter Saturation Voltage vs Collector Current FIG.4 Base Emitter ON Voltage vs Collector Current ICBO-COLLECTOR CUREENT (nA) 100 20 CAPACITANCE (pF) VCB=35V 10 16 12 1 Cib 8 4 0 -0.1 0.1 0.01 25 50 75 100 125 Cob -1 -10 -50 TA- AMBIENT TEMPERATURE ( C) REVERSE BIAS VOLTAGE (V) FIG.5 Collector-Cutoff Current vs. Ambient Temperature FIG.6 Input and Output Capacitance vs Reverse Bias Voltage WEITRON http://www.weitron.com.tw MMBT2907AT 250 200 TIME (nS) 500 I IB1=IB2= c 10 VCC=15V ts 400 TIME (nS) I IB1=IB2= c 10 VCC=15V 150 100 50 0 10 tr td 100 tf 300 200 t off 100 t on 0 10 1000 100 1000 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) FIG.7 Switching Times vs Collector Current FIG.8 Turn On and Turn Off Times vs Collector Current IB1 TURN ON BASE CURRENT (mA) 50 20 10 tr=15V 5 30ns 2 60ns 1 10 100 500 IC COLLERTOR CURRENT (mA) FIG.9 Rise Time vs Collector and Turn On Base Current WEITRON http://www.weitron.com.tw MMBT2907AT SOT-523 Outline Dimensions (SC-75) Unit:mm A SC-75 B T OP V IE W C D E G H K J L M Dim A B C D E G H J K L M Min 0. 30 0. 70 1. 45 0. 15 0. 80 1. 40 0. 00 0. 70 0. 37 0. 10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 WEITRON http://www.weitron.com.tw