MMBT3906

MMBT3906 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free COLLECTOR 3 3 1 BASE 2 EMITTER 1 SOT-23 2 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R θJA PD R θJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking MMBT3906=2A Electrical Characteristics Off Characteristics ( TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0) Base Cutoff Current ( VCE=-30 Vdc, VEB =-3.0 Vdc) Collector Cutoff Current ( VCE=-30Vdc, VEB=-3.0Vdc) 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width