MMBT3906T

MMBT3906T General Purpose Transistor PNP Silicon P b Lead(Pb)-Free COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SC-89 (SOT-523F) Value -40 -40 -5.0 -200 Unit V V V mA Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol PD RθJA PD RθJA TJ Tstg Max 200 1.6 600 300 2.4 400 -55 to +150 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C °C Device Marking MMBT3906T = 2A Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0) Base Cutoff Current ( VCE=-30 Vdc, VEB =-3.0 Vdc) Collector Cutoff Current ( VCE=-30Vdc, VEB=-3.0Vdc) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 3. Pulse Test : Pulse Width ≤ 300 µS, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 -50 -50 V V V nA nA - WEITRON http://www.weitron.com.tw 1/6 28-Sep-09 MMBT3906T Electrical Characteristics ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics (3) DC Current Gain (IC= -0.1 mA , VCE= -1.0V) (IC= -1.0 mA , VCE= -1.0 V) (IC= -10 mA , VCE= -1.0V) (IC= -50 mA , VCE= -1.0V) (IC= -100 mA , VCE= -1.0V) Collector-Emitter Saturation Voltage (IC= -10 mA , IB= -1.0mA) (IC= -50 mA , IB= -5.0mA) Base-Emitter Saturation Voltage (IC= -10 mA , IB= -1.0 mA) (IC= -50 mA , IB= -5.0 mA) VCE(sat) HFE 60 80 100 60 30 300 -0.25 -0.4 -0.85 -0.95 V - VBE(sat) -0.65 - V Small-signal Characteristics Current-Gain-Bandwidth Product (4) (IC= -10 mA , VCE= -20 V , f=100MHz) Output Capacitance ( VCB= -5.0 V , IE=0, f=1.0MHz) Input Capacitance ( VEB= -0.5 V , IC=0, f=1.0MHz) Input Impedance ( VCE= -10V, IC=-1.0 mA , f=1.0 kHz) Voltage Feeback Radio ( VCE= -10V, IC=-1.0 mA , f=1.0 kHz) Small-Signal Current Gain ( VCE= -10V, IC=-1.0 mA , f=1.0 kHz) Output Admittance ( VCE= -10V, IC=-1.0 mA , f=1.0kHz) Noise Figure ( VCE= -5.0V, IC= -100 µA , RS=1.0k , f=1.0kHz) fT Cobo Cibo hie hre hfe ho e NF 250 2.0 0.1 100 3.0 4.5 10 12 10 MHz pF pF kΩ x 10-4 400 60 4.0 µmhos dB Switching Characteristics Delay Time Rise Time Storage Time Fall Time ( Vcc= -3.0 V , VBE= 0.5 V Ic= -10 mA , IB1= -1.0 mA) ( Vcc= -3.0 V, Ic= -10 mA , IB1=IB2= -1.0 mA) td tr ts tf 35 35 225 75 ns ns 3.Pulse Test:Pulse Width< 300 µS, Duty Cycle< 2.0%. = = WEITRON http://www.weitron.com.tw 2/6 28-Sep-09 MMBT3906T 3V + 9.1 V