MMBT4401

MMBT4401 Switching Transistor NPN Silicon 1 BASE 2 EMITTER COLLECTOR 3 3 1 2 SOT-23 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking MMBT4401=2X Electrical Characteristics Off C har acter istics ( TA=25 C Unless Otherwise noted) Symbol Min Max Unit Characteristics Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=0.1mAdc, IE=0) Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0) Base Cutoff Current (VCE=35 Vdc, VEB =0.4 Vdc) Collector Cutoff Current (VCE=35Vdc, VEB=0.4Vdc) 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width