MMBT5089

MMBT5088 MMBT5089 Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free 1 BASE 2 EMITTER COLLECTOR 3 3 1 2 SOT-23 Maximum Ratings Rating Collector-Emitter Voltage C ol l e c t or-B a s e Vol t a ge E m i t t e r-B a s e Voltage C o l l e c t o r C u r r e n t -C o n t i n u o u s Symbol VC E O VC B O VE B O IC 5088LT1 30 35 4.5 50 5089LT1 25 30 Unit V dc V dc V dc m Ad c Thermal Characteristics Characteristics Tot a l D evi c e D i s s i p a t i on F R -5 B oa r d ( 1 ) T A= 2 5 C D e r a t e a b ove 2 5 C T h e r m a l R e s i s t a n c e, J u n c t i o n t o A m b i e n t Tot a l D evi c e D i s s i p a t i on A l u m i n a S u b s t r a t e, ( 2 ) T A = 2 5 C D e r a t e a b ove 2 5 C T h e r m a l R e s i s t a n c e, J u n c t i o n t o A m b i e n t J u n c t i on a n d S t or a ge, Te m p e r a t u r e Symbol PD R JA PD R JA T J , Ts t g Max 225 1.8 556 300 2.4 417 -5 5 t o + 1 5 0 Unit mW m W/ C C/ W mW m W/ C C/ W C Device Marking MMBT5088=1Q ; MMBT5089=1R Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collent-Emitter Breakdown Voltage IC = 1.0mA, IB=0 MMBT5088 IC = 1.0mA, IB=0 MMBT5089 Collent-Base Breakdown Voltage IC = 100µA, IE=0 IC = 100µA, IE=0 Collent Cutoff Current VCB = 20V, IE=0 VCB = 15V, IE=0 Emitte Cutoff Current VEB(off) = 3.0V, IC=0 VEB(off) = 4.5V, IC=0 MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 V(B R )C E O 30 25 35 30 50 50 50 100 V V(B R )C B O V nA nA ICB O IE B O 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw 1/5 13-Jan-06 MMBT5088 MMBT5089 Electrical Characteristics ( TA=25˚C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics DC Current Gain VCE = 5.0V, IC = 100µA VCE= 5.0V, IC= 1.0mA VCE= 5.0V, IC= 10mA MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) 300 400 350 450 300 400 - 900 1200 0.5 0.8 - Collector-Emitter Saturation Voltage IC = 100mA, IB = 1.0mA Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA V - V Small-signal Characteristics Current-Gain-Bandwidth Product VCE= 5.0V, IC = 500µA, f=20MHz) Collector-Base Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz emitter guarded Emitter-Base Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz collector guarded Small-Signal Current Gain VCE= 5.0V, IC=1.0 mA, f=1.0 kHz Noise Figure VCE = 5.0V, IC = 100 µA, RS=1.0k ohms, f=1.0kHz fT Ccb Ceb 50 4.0 10 MHz pF pF MMBT5088 MMBT5089 MMBT5088 MMBT5089 hfe 350 450 - 1400 1800 3.0 2.0 - NF dB RS in ~ en IDEAL TRANSISTOR Fig 1.Transistor Noise Model WEITRON http://www.weitron.com.tw 2/5 13-Jan-06 MMBT5088 MMBT5089 NOISE C HARACTERISTIC S NOISE V O LTA G E 30 30 (V CE = 5.0 Vdc, T A = 25°C) BANDWIDTH=1.0H z e n , NOISE VOLTAGE (nV) I C = 10 mA 3.0m A 1.0m A R S~ 0 ~ e n , NOISE VOLTAGE (nV) 20 20 BANDWIDTH=1.0H z R S~ 0 ~ f = 1 0H z 100H z 10kH z 1.0kH z 10 7.0 5.0 10 7.0 5.0 3.0 30 0 µ A 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 3.0 100kH z 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 Fig 2 . E ffects o f F requenc y 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 f, FREQUENCY (Hz) Fig 3 . E ffects o f C ollect o r C urre n t 20 I C , COLLECTOR CURRENT (mA) BANDWIDTH=1.0H z I n , NOISE CURRENT (pA) NF, NOISE FIGURE (dB) I C=10m A 3.0m A 1.0m A 30 0 µ A 10 0 µ A R S~ 0 ~ 10 20 50 100 16 BANDWI D T H =10 H z t o15 . 7 k H z 12 I C =1.0 m A 8.0 50 0 µ A 10 0 µ A 1 0µ A 4.0 1 0µ A 200 5001.0k 3 0µ A 2.0k 5.0k 10k 20k 50k100k 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k Fig 4. N oise C urren t f, FREQUENCY (Hz) Fig 5. W ideband N oise F igur e 100 H z N OISE D ATA R S , SOURCE RESISTANCE (OHMS) V T , TOTAL NOISE VOLTAGE (nV) 300 200 100 70 50 30 20 10 7.0 5.0 3.0 20 BANDWIDTH=1.0H z 10 0 µ A 3.0m A 1.0m A 30 0 µ A I C =10m A NF, NOISE FIGURE (dB) 16 I C = 1 0m A 3.0m A 1.0m A 30 0 µ A 12 3 0µ A 1 0µ A 8.0 10 0 µ A 4.0 3 0µ A BANDWIDTH=1.0H z 1 0µ A 0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Fig 6. Total N oise Voltag e R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Fig 7. N oise F igur e WEITRON http://www.weitron.com.tw 3/5 13-Jan-06 MMBT5088 MMBT5089 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 2.0 V CE =5.0 V T A=125 ° C 25° C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 –55° C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Fig 8. D C C urrent G ai n R θVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) 1.0 –0.4 T J =25° C V, VOLTAGE (VOLTS) 0.8 –0.8 0.6 V BE @V CE = 5.0V –1.2 0.4 –1.6 T J=25°C t o 1 25° C 0.2 –2.0 0 0.01 0.02 V CE(sat) @ I C /I B =1 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –55°C t o25° C 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.05 –0.4 0.01 0.02 I C , COLLECTOR CURRENT (mA) Fig 9. “ On” Voltage s 0.8 0.6 500 I C , COLLECTOR CURRENT (mA) Fig 10. Temperature C oefficient s T J = 2 5° C C ob C eb C cb C ib f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) 300 200 0.4 0.3 0.2 100 70 50 V CE = 5.0 V 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 T J = 2 5° C 1.0 2.0 5.0 10 20 50 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Fig 11. C apacitanc e Fig 12. C urrent–Gain - Bandwidth P roduc t WEITRON http://www.weitron.com.tw 4/5 13-Jan-06 MMBT5088 MMBT5089 SOT-23 Package Outline Dimension SOT-23 A TOP VIEW B C D E G H K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 5/5 13-Jan-06