MMBTA13 MMBTA14 NPN Transistors Darlington Amplifier
COLLECTOR 3 BASE 1
EMITTER 2
MA XIMUM R A T ING S
R ating C ollector- E mitter V oltage C ollector- B as e V oltage E mitter- B as e V oltage C ollector C urrent - C ontinuous S ymbol VC E S VC BO VE BO IC V alue 30 30 10 300 Unit V dc V dc V dc mAdc
1 2 3
T HE R MA L C HA R A C T E R IS T IC S
C harac teris tic Total D evice Dis s ipation F R ±5 B oard(1) TA = 25 C Derate above 25 C T hermal R es is tance J unction to Ambient Total Device Dis s ipation Alumina S ubs trate, (2) T A = 2 5 C Derate above 25 C T hermal R es is tance J unction to Ambient J unction and S torage Temperature S ymbol PD Max 225 1.8 R JA PD 556 300 2.4 R qJ A T J , Ts tg 417 - 55 to +150 Unit mW mW/ C C /W mW mW/ C C /W C
S OT - 23
DE V IC E MA R K ING
MMB T A13 = 1M; MMB T A14LT 1 = 1N
E L E C T R IC A L C HA R A C T E R IS T IC S ( T A = 2 5 C unles s otherwis e noted)
C harac teris tic S ymbol Min Max Unit
OF F C HA R A C T E R IS T IC S
C ollector- E mitter B reakdown V oltage (I C = 1 00 uAdc, V B E = 0 ) C ollector C utoff C urrent (V C B = 3 0 V dc, I E = 0 ) E mitter C utoff C urrent (V E B = 1 0 V dc, I C = 0 ) 1. F R - 5 = 1.0 0 .75 0 .062 in. 2. Alumina = 0.4 0 .3 0 .024 in. 99.5% alumina.
_ __ _ _ _ _ _
V (B R )C E S IC B O IE B O
30 -
100 100
V dc nAdc nAdc
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MMBTA13 MMBTA14
E L E C T R IC A L C HA R A C T E R IS T IC S ( T A = 2 5 C unles s otherwis e noted) (C ontinued)
C harac teris tic S ymbol Min Max Unit
ON C HA R A C T E R IS T IC S (3)
DC C urrent G ain (I C = 1 0 mAdc, V C E = 5 .0 V dc) (I C = 1 00 mAdc, V C E = 5 .0 V dc) C ollector- E mitter S aturation V oltage (I C = 1 00 mAdc, I B = 0 .1 mAdc) B as e - E mitter On V oltage (I C = 1 00 mAdc, V C E = 5 .0 V dc) MMB T A13 MMB T A14 MMB T A13 MMB T A14 V C E (s at) VBE hF E 5000 10,000 10,000 20,000 1.5 2.0 V dc V dc
S MA L L - S IG NA L C HA R A C T E R IS T IC S
C urrent- G ain - B andwidth P roduct (4) (I C = 1 0 mAdc, V C E = 5 .0 V dc, f = 100 MHz) 3. P uls e Tes t: P uls e Width 4. fT = |hfe | ftes t. 3 00 us , Duty C ycle 2 .0%. fT 125 MHz
RS
in en
IDEAL TRANSISTOR
F IG .1. T rans is tor Nois e Model
500 200 100
BANDWIDTH = 1.0 Hz RS @ 0 in, NOISE CURRENT (pA)
2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 100 m A 10 m A
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
10mA 50 100mA 20 IC = 1.0 m A 10 5.0
10 20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (H z)
F IG .2 Nois e V oltage
F IG .3 Nois e C urrent
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MMBTA13 MMBTA14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 m A 10 10 m A 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (kW) 500 1000 IC = 1.0 mA 100 m A 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 100 70 50 30 20 1.0 mA 10 1.0 100 mA
2.0
F IG .4 T otal W ideband Nois e V oltage
20 TJ = 25 C |hfe |, SMALL- SIGNAL CURRENT GAIN 4.0
F IG .5 W ideband Nois e F igure
C, CAPACITANCE (pF)
10 7.0 5.0
2.0
VCE = 5.0 V f = 100 MHz TJ = 25 C
Cibo Cobo
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
0.2 0.4 1.0 2.0 4.0 10 VR , REVERSE VOLTAGE (VOLTS)
20
40
0.2 0.5
1.0
2.0
0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (m A)
500
F IG .6 C apac itanc e
F IG .7 High F requenc y C urrent G ain
200 k TJ = 125 C hFE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10
VCE , COLLECTOR- EMITTER VOLTAGE (VOLTS)
3.0 TJ = 25 C 2.5 IC = 10 mA 50 mA 250 mA 500 mA
25 C
2.0
1.5
- 55 C VCE = 5.0 V
1.0 0.5 0.1 0.2
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (m A)
500 1000
F IG .8 DC C urrent G ain
F IG .9 C ollec tor S aturation R egion
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MMBTA13 MMBTA14
R qV, TEMPERATURE COEFFICIENTS (mV/ C) 1.6 TJ = 25 C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ I C/IB = 1000 1.2 VBE(on) @ V CE = 5.0 V 1.0 - 1.0 - 2.0 - 3.0 25 C TO 125 C - 4.0 VB FOR V BE - 5.0 - 6.0 5.0 7.0 10 - 55 C TO 25 C *APPLIES FOR IC/IB 3 hFE /3.0 *Rq VC FOR V CE( sat) - 55 C TO 25 C 25 C TO 125 C
0.8
VCE( sat) @ I C/IB = 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
0.6 5.0 7.0
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
F IG .10. " On" V oltages
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 0.05 SINGLE PULSE
F IG .11
T emperature C oeffic ients
r(t), TRANSIENTTHERMAL RESIST ANCE (NORMALIZED)
D = 0.5 0.2
SINGLE PULSE ZqJC(t) = r(t)wR qJC T J(pk) - T C = P(pk)ZqJC(t) ZqJA(t) = r(t)wR qJA T J(pk) - T A = P(pk)ZqJA(t) 100 200 500 1.0 k 2.0 k 5.0 k 10 k
F IG .12 T hermal R es pons e
IC, COLLECTOR CURRENT (mA)
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25 C TC = 25 C
1.0 ms 100 m s
FIGURE A tP PP PP
1.0 s
t1 1/f 40 t1 tP PEAK PULSE POWER = PP DUTY CYCLE t1 f
1.0 2.0 4.0 6.0 10 20 VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS)
F IG .13 A c tive R egion S afe Operating A rea
Des ign Note: Us e of T rans ient T hermal R es is tanc e Data
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MMBTA13 MMBTA14 SOT-23 Package Outline Dimensions
Unit:mm
A
TOP VIEW
B
C
E
G H
D
K L
Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25
M
J
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