MMBTA42
High-Voltage NPN Transistor Surface Mount
COLLECTOR 3
SOT-23
3 1
1 BASE 2 EMITTER
2
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 300 300 5.0 500 Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R JA PD R JA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C
Device Marking
MMBTA42=1D
Electrical Characteristics Off Characteristics
(TA=25 C Unless Otherwise noted) Symbol Min Max Unit
Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE=10 Adc, IC=0) Base Cutoff Current (VCB=200 Vdc, IE=0) Emitter Cutoff Current VEB=3V, IC=0 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
300 300 5.0
0.25 0.1
Vdc Vdc Vdc Adc Adc
-
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MMBTA42
Electrical Characteristics (TA=25
Characteristics C unless otherwise noted) (Countinued) Symbol Min
WE IT R ON
Max Unit
On Characteristics
DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 30 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage(3) (IC= 20 mAdc, IB= 2.0 mAdc) Base-Emitter Saturation Voltage (3) (IC= 20 mAdc, IB= 2.0 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 5 Vdc, f=130MHz) HFE(1) HFE(2) HFE(3) VCE(sat) VBE(sat) 25 100 25
-
200 0.5 0.9
-
Vdc Vdc
-
fT
-50
-
MHz
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MMBTA42
Typical Characteristics
120
hFE, DC CURRENT GAIN
WE IT R ON
100 80 60 40 20 0 0.1
Tj=+125 C
25 C
-55 C
Figure ,1 DC Current Gain
1.4 1.2
V, VOLTAGE (VOLTS)
1.0 IC, COLLECTOR CURRENT (mA)
10
100
1.0 0.8 0.6 0.4 0.2 00 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100
VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V
Figure,2 "On"Voltages
fT, CURRENT-GAIN-BANDWIDTH (MHz) 80 70 60 50 40 30 20 10 1.0 2.0 3.0
Tj=25 C VEC=20V f=20MHz
5.0 7.0 10 20 30 50 70 100
Ic, COLLECTOR CURRENT (mA)
Figure ,3 Current-Gain-Bandwidth
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MMBTA42 SOT-23 Package Outline Dimension
SOT-23
A
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
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