MMBTA43

MMBTA42 MMBTA43 High-Voltage NPN Transistor Surface Mount P b Lead(Pb)-Free COLLECTOR 3 3 1 2 1 BASE 2 EMITTER SOT-23 Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Collector-Emitter Voltage MMBTA42 MMBTA43 MMBTA42 MMBTA43 MMBTA42 MMBTA43 Symbol VCEO Value 300 200 300 200 6.0 6.0 500 Unit V Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO IC V mA Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note.1) TA=25°C Derate above 25°C Thermal Resistance, Junctionto Ambient (Note.1) Total Device Dissipation Alumina Substrate (Note.2) TA=25°C Derate above 25°C Thermal Resistance, Junctionto Ambient (Note.1) Junctionand Temperature Range Storage Temperature Range Symbol PD RθJA PD RθJA TJ Tstg Max 225 1.8 556 300 2.4 417 +150 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C °C Device Marking MMBTA42 = 1D , MMBTA43 = M1E 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.weitron.com.tw WEITRON 1/4 15-Dec-06 MMBTA42 MMBTA43 Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Min Typ WEITRON Max Unit Off Characteristics3 Collector-Emitter Breakdown Voltage (IC=1.0mA, IB=0) Collector-Base Breakdown Voltage (IC=10μA, IE=0) Emitter-Base Breakdown Voltage (IE=100μA, IC=0) Collector Cutoff Current (VCB=200V, IE=0) (VCB=160V, IE=0) Emitter Cutoff Current (VEB=6.0V, IC=0) (VEB=4.0V, IC=0) MMBTA42 MMBTA43 MMBTA42 MMBTA43 MMBTA42 MMBTA43 V(BR)CEO 300 200 300 200 6.0 6.0 0.1 0.1 0.1 0.1 V V(BR)CBO V V(BR)EBO V ICBO μA μA IEBO On Characteristics3 DC Current Gain (IC=1.0mA, VCE=10V) (IC=10mA, VCE=10V) (IC=30mA, VCE=10V) Collector-Emitter Saturation Voltage (IC=20mA, IB=2.0mA) Base-Emitter Saturation Voltage (IC=10mA,IB=0.5mA) (IC=100mA,IB=5.0mA) hFE 25 40 40 0.5 V VCE(sat) VBE(sat) - - 0.9 V Small-signal Characteristics Current-Gain-Bandwidth Product (IC=10mA, VCE=20V, f=100MHz) Output Capacitance (VCB=20V, IE=0, f=1.0MHz) fT 50 3.0 4.0 MHz MMBTA42 MMBTA43 Ccb - - pF 3. Pulse Test : Pulse Width 300µS, Duty Cycle ≤ 2.0%. http://www.weitron.com.tw WEITRON 2/4 15-Dec-06 MMBTA42 MMBTA43 Typical Characteristics 120 hFE, DC CURRENT GAIN 100 80 60 40 20 0 0.1 Tj= + 1 2 5 C 25 C -5 5 C Figure ,1 DC Current Gain 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) 10 100 1.0 0.8 0.6 0.4 0.2 00 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V Figure,2 "On"Voltages fT, CURRENT-GAIN-BANDWIDTH (MHz) 80 70 60 50 40 30 20 10 1.0 2.0 3.0 Tj= 2 5 C VEC= 2 0 V f= 2 0 MHz 5.0 7.0 10 20 30 50 70 100 Ic, COLLECTOR CURRENT (mA) Figure ,3 Current-Gain-Bandwidth http://www.weitron.com.tw WEITRON 3/4 15-Dec-06 MMBTA42 MMBTA43 SOT-23 Outline Dimension A SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 TOP VIEW D E G H B C K J L M WEITRON http://www.weitron.com.tw 4/4 15-Dec-06