MMBTA64
Darlington Transistor PNP Silicon
1
BASE COLLECTOR
3 3 1 2 2
EMITTER
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCES VCBO VEBO IC Value -30 -30
-10 -500
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ,Tstg Value 225 1.8 556 -55 to +150 Unit mW mW/ C C/W C
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage(I C =-100 uAdc, IB =0) Collector Cufoff Current(V CB =-30Vdc, I E =0) Emitter Cufoff Current(VEB =-10Vdc, IC =0) 1. FR-5=1.0 I I0.75 I I0.062 in _ _ 2. Pulse Test: Pulse Width< 300us, Duty Cycle < 2.0% Symbol V(BR)CEO ICBO IEBO Min -30 Max -0.1 -0.1 Unit Vdc uAdc uAdc
WEITRON
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MMBTA64
ELECTRICAL CHARACTERISTICS ( Ta=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
hFE (I C = -10 mAdc, VCE= -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0Vdc) 10000 20000
-
Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1mAdc) Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0mAdc)
VCE(sat)
-
-1.5 -2.0
Vdc Vdc
VBE(on)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC = -10 mAdc, VCE=-5.0 Vdc, f=100 MHz) fT 125
-
MHz
WEITRON
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MMBTA64
200
DC CURRENT GAIN : h FE
100 70 50 30 20 10 7.0 5.0 3.0 2.0 -0.3
Ta =125 C
25 C VCE =-2.0V -5.0V
-10V
-55 C
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0 -10
-20
-30
-50
-70
-100
-200
-300
COLLECTOR CURRENT : IC (mA)
FIG.1 DC Current Gain
-2.0 Ta =25 C
V,VOLTAGE (VOLTS)
VCE ,COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0 Ta =25 C -1.8 -1.6 IC =-10mA -50mA -100mA -175mA -300mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.1-0.2-0.5 -1 -2 -5 -10-20 -50 -100-200-500-1K -5K-10K -2K
BASE CURRENT : IB (uA)
-1.6 -1.2
VBE(sat) @IC/IB=100
VBE(on) @VCE =-5.0V -0.8 -0.4 0 -0.3-0.5 -1.0 VCE(sat) @IC/IB=1000 IC/IB=100
-2 -3 -5
-10
-20 -30 -50 -100 -200-300
COLLECTOR CURRENT : IC (mA)
FIG.2 "On" Voltage
10 4.0 3.0 2.0 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 VCE =-5.0V f=100MHz Ta =25 C
FIG.3 Collector Saturatiion Region
HIGH FREQUENCY CURRENT GAIN : hFE
-50 -100 -200
-500 -1K
COLLECTOR CURRENT : IC (mA)
FIG.4 High Frequency Current Gain
WEITRON
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MMBTA64 SOT-23 Package Outline Dimensions
Unit:mm
A
T OP V IE W
B
C
E
G H
D
K J L M
Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25
WEITRON
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