MMBTA92

MMBTA92 High-Voltage PNP Transistor Surface Mount P b Lead(Pb)-Free 1 BASE 2 EMITTER COLLECTOR 3 3 1 2 SOT-23 Value -3 0 0 -3 0 0 -5 . 0 -5 0 0 Unit V dc V dc V dc m Ad c Maximum Ratings Rating C ol l e c t or-E m i t t e r Vol t a ge C ol l e c t or-B a s e Vol t a ge E m i t t e r-B a s e V O l t a ge C o l l e c t o r C u r r e n t -C o n t i n u o u s Symbol VC E O VC B O VE B O IC Thermal Characteristics Characteristics Tot a l D evi c e D i s s i p a t i on F R -5 B oa r d ( 1 ) T A= 2 5 C D e r a t e a b ove 2 5 C T h e r m a l R e s i s t a n c e, J u n c t i o n t o A m b i e n t Tot a l D evi c e D i s s i p a t i on A l u m i n a S u b s t r a t e, ( 2 ) T A = 2 5 C D e r a t e a b ove 2 5 C T h e r m a l R e s i s t a n c e, J u n c t i o n t o A m b i e n t J u n c t i on a n d S t or a ge, Te m p e r a t u r e Symbol PD R JA PD R JA T J , Ts t g Max 225 1.8 556 300 2.4 417 -5 5 t o + 1 5 0 Unit mW m W/ C C/ W mW m W/ C C/ W C Device Marking MMB T A 9 2 =2 D Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics C ol l e c t or-E m i t t e r B r e a k d own Vol t a ge ( 3 ) ( I C = -1 . 0 m Ad c . I B = 0 ) C ol l e c t or-B a s e B r e a k d own Vol t a ge ( I C = -1 0 0 Ad c , I E = 0 ) E m i t t e r-B a s e B r e a k d own Vol t a ge ( I E = -1 0 Ad c , I C = 0 ) C o l l e c t C u t o f f C u r r e n t ( V C B = -2 0 0 V d c , I E = 0 ) E m i t t e C u t of f C u r r e n t ( V E B = 3 V, I C = 0 ) 1 . F R -5 = 1 . 0 x 0 . 7 5 x 0 . 0 6 2 i n . 2 . Al u m i n a = 0 . 4 x 0 . 3 x 0 . 0 2 4 i n . 9 9 . 5 % a l u m i n a . 3 . P u l s e Te s t : P u l s e Wi d t h 3 0 0 µS , D u t y C yc l e 2 . 0 % . V(B R )C E O V(B R )C B O V(B R )E B O ICB O IE B O -3 0 0 -3 0 0 -5 . 0 -0 . 2 5 -0 . 1 V dc V dc V dc Ad c Ad c - WEITRON http://www.weitron.com.tw 1/4 23-Sep-05 MMBTA92 Electrical Characteristics ( TA=25˚C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE= -10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -30 mAdc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (3) (IC= -20 mAdc, IB= -2.0mAdc) Base-Emitter Saturation Voltage (3) (IC= -20 mAdc, IB= -2.0 mAdc) Current-Gain-Bandwidth Product (IC= -10 mAdc, VCE= -5 Vdc, f=30MHz) HFE(1) HFE(2) HFE(3) VCE(sat) VBE(sat) fT 25 100 25 - 200 0.5 - Vdc - 0.9 Vdc MHz 50 - WEITRON http://www.weitron.com.tw 2/4 23-Sep-05 MMBTA92 Typical Characteristics 120 hFE, DC CURRENT GAIN 100 80 60 40 Tj=+125 C 25 C -55 C 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1, DC Current Gain 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 00 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V Figure 2, "On"Voltages fT, CURRENT-GAIN-BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 TJ = 25ºC VCE = 20Vdc F = 20MHz 7 9 11 13 15 17 19 21 Ic, COLLECTOR CURRENT (mA) Figure 3, Current-Gain- Bandwidth WEITRON http://www.weitron.com.tw 3/4 23-Sep-05 MMBTA92 SOT-23 Package Outline Dimension SOT-23 A TOP VIEW B C D E G H K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 23-Sep-05