MMBTH10_07

MMBTH10 NPN 1.1 GHz RF Transistor P b Lead(Pb)-Free BASE COLLECTOR 3 1 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the 100mA~20mA Range in Common emitter or Common base mode of operations. SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC PD Value 25 30 3 50 225 1.8 Unit V V V mA Total Power Dissipation FR-5 Board (1) TA =25°C Derate above =25°C Thermal Resistance , Junction Ambient Junction Temperature Storage Temperature 1. Tj = 25°C unless otherwise specified. mW mW/°C °C/W °C °C RθJA TJ Tstg 556 +150 -55~150 Device Marking MMBTH10=3EM , HT10 WEITRON http://www.weitron.com.tw 1/6 09-Feb-07 MMBTH10 ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued) Characteristics Collector-Emitter Voltage (IC =10mA , IB = 0 ) Collector-Base Voltage (IC =10µA , IE = 0) Emitter-Base Voltage (IE =10µA , IC =0) Collector cut-off current ( IE = 0 , VCB = 25V ) Emitter cut-off current ( IC = 0 , VEB = 2.0V ) DC current gain (IC=4mA , VCE = 10V ) Collector-Emitter Saturation (IC=4mA ,IB = 0.4mA ) Base-Emitter On Voltage (IC=4mA , VCE = 10V ) Transition frequency (IC =4mA , VCE = 10V , f =100MHz ) Collector-Base Capacitance(VCB=10V ,IE = 0 , f =1.0MHz ) Common-Base Feedback Capacitance ( VCB= 10V , IE= 0 , f = 1MHz ) Collector Base Time Constant (IC =4mV , VCB = 10V , f = 31.8MHz ) Symbol VCEO VCBO VEBO I CBO I EBO hFE VCE(sat) VBE(on) fT Ccb Crb Min 25 30 3 - Typ - Max 100 100 0.5 0.95 0.7 Unit V V V nA nA V V GHZ pF pF ps 60 - 0.65 - 1.1 - 0.65 9.0 rb’Cc http://www.weitron.com.tw WEITRON 2/6 09-Feb-07 MMBTH10 Typical Characteristics Typ ical Pulsed Current Gain vs Collector Curren t 100 80 60 40 20 0 0.1 0.2 125 °C V ce = 5 V VCESAT- C OLLEC TOR- EMITTER VO LTAGE ( V) h FE - T YPICAL PUL SED CURRENT GAIN Col lector -Emitt er Saturation Voltage vs Coll ector Cur rent 0.2 β = 10 0.15 125 °C 25 °C 25 °C 0.1 - 4 0 °C 0.05 - 40 °C 0.5 1 2 5 10 20 I C - COL LECTOR CURRENT (mA) P 42 50 0.1 1 10 I C - CO LLEC TOR CU RREN T (m A) 20 1 VB E(ON) BA SE- EMITTER O N VOLTAGE (V) - VBESAT- B ASE-EM ITT ER VOLTAG E ( V) Base-Emitter Saturation Voltage vs Collector Current β = 10 - 40 ° C 25 °C 125 °C Base- Em itt er O N Volt age vs Coll ector Curr ent 1 0 .8 0 .6 0 .4 0 .2 0 .0 1 V CE 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 = 5V - 40 °C 25 ° C 125 ° C IC 1 10 - C OLLEC TOR C U RR ENT (m A) P 42 20 0 .1 1 10 I C - CO LLEC TOR C UR REN T (m A) P 42 1 00 Coll ector -Cut off Cur rent vs Ambient Temper at ure ICBO- COLLEC TO R CU RREN T ( nA) 10 Power Dissipation vs Ambient Temperature 350 PD - PO WER DISSI PATIO N (mW) 300 250 200 150 100 50 0 0 25 50 75 100 T EMPERATURE ( o C) 125 150 VCB = 3 0V SOT-23 1 0.1 25 50 75 100 125 ° T A - AMBIEN T TEMPERATU RE ( C) 150 WEITRON http://www.weitron.com.tw 3/6 09-Feb-07 MMBTH10 Common Base Y Parameters vs. Frequency In put Admittanc e Y i b - INPUT ADMIT TANCE (mmh os) 120 80 40 0 - 40 - 80 VC E = 1 0V I C = 5 mA Ou tp ut Admittan ce Yob - OUTPUT ADMITTANCE (mmho s) 12 10 8 6 4 2 0 100 200 500 f - F REQUE NC Y (MHz) P 42 (BASE) VC E = 10V g ib I C = 5 mA b ob g ob 1000 b ib 200 500 f - F REQUENCY (MHz) P 42 (BASE) -120 100 1000 Y fb - F ORWARD ADMITTANC E (m mh os) 120 80 40 0 - 40 - 80 Yr b - REVE RSE ADMITTAN CE (mm hos) Forw ard Transfer Admittance b fb Reverse Transfer Ad mittanc e VC E = 10V I C = 5 mA 8 6 g 4 fb - b rb VC E = 10V I C = 5 mA 200 500 f - F REQUENCY (MHz) 1000 2 -120 100 0 100 - g rb 200 500 f - F REQU ENCY (MHz) ( S) 1000 WEITRON http://www.weitron.com.tw 4/6 09-Feb-07 MMBTH10 Common Emitter Y Parameters vs. Frequency Input Admittance Y i e - INPUT ADMIT TANCE (mm ho s) 24 20 16 12 8 4 0 100 200 500 f - F REQUENCY (MHz) 1000 VC E = 10V I C = 2 mA Yoe - OUTP UT ADMIT TANCE (mmh os) Ou tput Ad mittan ce VC E = 10V I C = 2 mA 6 5 4 3 2 1 0 100 g ie b oe b ie g oe 200 500 f - F REQUENCY (MHz) P 42 (EMITTER) 1000 Y fe - FORWARD ADMITTANCE (m mho s) 60 40 20 0 VC E = 10V Yr e - REV ERSE ADMIT TANCE (mmh os) F orw ard Tran sfer Admittanc e g I C = 2 mA Revers e Tran sfer Ad mitta nce 1 VC E = 10V I C = 2 mA 1 .2 fe 0 .8 0 .6 0 .4 0 .2 0 100 - b re - 20 - 40 - 60 100 b fe 200 500 f - F REQUENCY (MHz) P 42 (EMITTER) - g re 200 500 f - F REQUENCY (MHz) 1000 1000 WEITRON http://www.weitron.com.tw 5/6 09-Feb-07 MMBTH10 SOT-23Package Outline Dimensions A Unit:mm TO P V I EW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 http://www.weitron.com.tw WEITRON 6/6 09-Feb-07