MPS2907 MPS2907A
PNP General Purpose Transistors
2 BASE
COLLECTOR 3
TO-92
1 EMITTER
1
2
3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 -60 -5.0 -600 2907A -60 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R JA PD R JA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) MPS2907 MPS2907A Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Collector Cutoff Current (VCE= -30 Vdc, VEB (0ff)= -0.5Vdc) Collector Cutoff Current (VCB= -50 Vdc, IE=0) (VCB= -50Vdc, IE=0, TA=125 C) Base Cutoff Current (VCE= -30Vdc, VEB(off)= -0.5Vdc) 1.FR-5=1.0 x 0.75 x 0.062 in 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina MPS2907 MPS2907A MPS2907 MPS2907A MPS2907A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB -40 -60 -60 -5.0 -50 -0.020 -0.010 -20 -10 -50 Vdc Vdc Vdc nAdc
nAdc
nAdc
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MPS2907 MPS2907A
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC= -0.1 mAdc, VCE= -10 Vdc) (IC= -1.0 mAdc, VCE= -10 Vdc) (IC= -10 mAdc, VCE= -10 Vdc) (IC= -150 mAdc, VCE= -10 Vdc) (IC= -500 mAdc, VCE= -10 Vdc) Collector-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) Base-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A VCE(sat) hFE 35 75 50 100 75 100 100 30 50 300 -0.4 -1.6 -1.3 -2.6 Vdc
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (1),(2) (IC= -50 mAdc, VCE -=20 Vdc, f=100MHz) Output Capacitance ( VCB= -10 Vdc, IE=0, f=1.0MHz) Input Capacitance ( VEB= -2.0 Vdc, IC=0, f=1.0MHz) 1.Pulse Test:Pulse Width < 300 µs, Duty Cycle < 2.0%. 2.fT is defined as the frequency at which Ihfe extrapolates to unity. fT Cobo Cibo 200 8.0 30 MHz pF pF
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MPS2907 MPS2907A Typical Characteristics
hFE NCRMALIZED CURRENT GAIN
3.0 2.0
TJ=125 C 25 C
1.0 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10
-55 C
VCE=-1.0V VCE=-10V
-20 -30 -50 -60 -100 -100 -300 -500
IC, COLLECTOR CURRENT(mA)
DC Current Gain
f T,CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)
-1.0
400 300 200
TJ=25 C V VOLTAGE (VOLTS)
-0.8 -0.6 -0.4
VBE(sat)@IC/IB=1C VBE(on)@VCE= -10V
100 80 60 40 30 20 -1.0 -2.0 -5.0 -10
VCE=20V TJ=25 C
-0.2
VCE(sat)@IC/IB=10
-2.0 -5.0 -10 -20 -50 -100 -200 -500
0 -0.1 -0.2 -0.5 -1.0
-20
-50
-100 -200
-500 -1000
IC, COLLECTOR CURRENT(mA)
"On"Voltage
IC, COLLECTOR CURRENT(mA)
Current-Gain-Bandwidth Product
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MPS2907 MPS2907A
TO-92 Outline Dimensions
E
unit:mm
TO-92
H
C
J K
G
Dim A B C D E G H J K L
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
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D
A
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