MPSA42

MPSA42 NPN Silicon General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC TJ, Tstg RӨJA RӨJC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction and Storage Temperature Thermal Resistance, junction to Ambient Thermal Resistance, unction to Case Parameter Value 310 305 5 500 -55-150 200 83.3 Units V V V mA ℃ ℃/mW ℃/mW *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT Test unless otherwise specified) MIN 310 305 5 0.25 0.1 60 80 75 0.2 0.9 50 V V MHz 250 TYP MAX UNIT V V V µA µA conditions Ic=100uA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA,f=30MHZ CLASSIFICATION OF hFE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250 WEITRON http://www.weitron.com.tw MPSA42 WEITRON http://www.weitron.com.tw MPSA42 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A