MPSA43

MPSA43

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    MPSA43 - High-Voltage NPN Transistors - Weitron Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
MPSA43 数据手册
MPSA43 High-Voltage NPN Transistors P b Lead(Pb)-Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation T A =25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 200 200 6.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W °C °C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current ( VCB= 160 Vdc, IE=0) Emitter Cutoff Current ( VEB= 4.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 200 200 6.0 Max 0.1 0.1 Unit Vdc Vdc Vdc µA µA WEITRON http://www.weitron.com.tw 1/3 29-Mar-06 MPSA43 Electrical Characteristics ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WEITRON Max Unit On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 30 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2.0 mAdc) Base-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2.0 mAdc) Transistion Frequency (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) VBE(sat) - HFE(1) HFE(2) HFE(3) 25 40 40 - - VCE(sat) - 0.4 Vdc 0.9 Vdc fT 50 - MHz WEITRON http://www.weitron.com.tw 2/3 29-Mar-07 MPSA43 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270T YP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 3/3 29-Mar-07
MPSA43
1. 物料型号: - 型号为MPSA43,是一款无铅高电压NPN晶体管。

2. 器件简介: - 该器件为华强PCB和华强芯城提供的Lead(Pb)-Free High-Voltage NPN Transistors,即无铅高电压NPN晶体管。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 基极(Base) - 3. 集电极(Collector)

4. 参数特性: - 绝对最大额定值: - 集电极-发射极电压(VCEO):200Vdc - 集电极-基极电压(VCBO):200Vdc - 发射极-基极电压(VEBO):6.0Vdc - 集电极电流(IC):500mAdc - 总器件耗散功率(TA=25°C,PD):0.625W - 结温(Tj):150℃ - 存储温度(Tstg):-55至+150℃

5. 功能详解: - 电气特性: - 集电极-发射极击穿电压(V(BR)CEO):200Vdc - 集电极-基极击穿电压(V(BR)CBO):200Vdc - 发射极-基极击穿电压(V(BR)EBO):6.0Vdc - 集电极截止电流(ICBO):小于0.1μA - 发射极截止电流(IEBO):小于0.1μA - 开启特性: - DC电流增益(HFE)在不同集电极电流下的值分别为25, 40, 40 - 集电极-发射极饱和电压(VCE(sat)):0.4Vdc - 基极-发射极饱和电压(VBE(sat)):0.9Vdc - 转换频率(fr):50MHz

6. 应用信息: - 该晶体管适用于需要高电压、大功率的场合,如电源、放大器等。

7. 封装信息: - 封装类型为TO-92,具体尺寸如下: - A:3.30-3.70mm - B:1.10-1.40mm - C:0.38-0.55mm - D:0.36-0.51mm - E:4.40-4.70mm - G:3.43mm - H:4.30-4.70mm - J:1.27mm(典型值) - K:2.44-2.64mm - L:14.10-14.50mm
MPSA43 价格&库存

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