MPSA55

MPSA55 MPSA56 Driver PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg MPSA55 -60 -60 -4.0 -500 0.625 150 -55 to +150 MPSA56 -80 -80 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) MPSA55 MPSA56 Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) MPSA55 MPSA56 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= 50 Vdc, IB =0) MPSA55 (VCE= 60 Vdc, IB =0) MPSA56 Collector Cutoff Current (VCE= -60 Vdc, I B=0) MPSA55 (VCE= -80 Vdc, I B=0) MPSA56 Emitter Cutoff Current (VEB= -3.0Vd c, IC =0) Symbol V(BR)CEO Min -60 -80 -60 -80 -4.0 Max Unit Vdc V(BR)CBO V(BR)EBO ICE0 -0.1 Vdc Vdc uAdc ICBO IEBO - -0.1 -0.1 uAdc uAdc WEITRON http://www.weitron.com.tw MPSA55 MPSA56 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10 mAdc) Base-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10 mAdc) Current-Gain-Bandwidth Product (IC= -10 mAdc, VCE= -2.0 Vdc, f=100 MHz) hFE (1) VCE(sat) VBE(sat) fT 100 100 - -0.25 -1.2 Vdc Vdc - - MHz f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz) 200 VCE = -2.0 V TJ = 25 C C, CAPACITANCE (pF) 100 70 50 100 70 50 30 20 TJ = 25 C 30 20 -2.0 -3.0 10 7.0 Cobo -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 5.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mA) VR , REVERSE VOL TAGE (VOLTS) F IG 1. C urrent-G ain ÐB andwidth P roduc t F IG 2. C apac itanc e WEITRON http://www.weitron.com.tw MPSA55 MPSA56 400 TJ = 125 C hFE , DC CURRENT GAIN 200 25 C -55 C VCE = -1.0 V V, VOLTAGE (VOLTS) -1.0 TJ = 25 C VBE(sat) @ I C/IB = 10 -0.8 -0.6 VBE(on) @ V CE = -1.0 V 100 80 60 -0.4 -0.2 VCE(sat) @ I C/IB = 10 0 -0.5 40 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) F IG 3. DC C urrent G ain F IG 4. " ON" V oltages VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) TJ = 25 C -0.8 IC = -50 mA IC = -100 mA IC = -250 mA IC = -500 mA R VB , TEMPERATURE COEFFICIENT (mV/ C) -1.0 -0.8 -1.2 -0.6 -1.6 -2.0 R VB for VBE -0.4 -0.2 IC = -10 mA -2.4 -2.8 -0.5 -1.0 -2.0 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -5.0 -10 -20 -50 -100 -200 -500 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) F IG 5. C ollec tor S aturation R egion F IG 6. B as e-E mitter T emperature C oeffic ient WEITRON http://www.weitron.com.tw MPSA55 MPSA56 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A