MUN5135

MUN5135

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    MUN5135 - Bias Resistor Transistor PNP Silicon - Weitron Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
MUN5135 数据手册
MUN5111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 BASE 1 R1 R2 3 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value 50 50 100 Unit Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Symbol PD Max 202 (1) 310 (2) 1.6 (1) 2.5 (2) 618 403 -55 to +150 Unit mW mW/ C C/W C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range R θJA TJ,Tstg 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad l Device Marking and Resistor Values Device MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 Marking 6A 6B 6C 6D 6E 6F 6G R1(K) 10 22 47 10 10 4.7 1.0 R2(K) 10 22 47 47 88 Device MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 Marking 6H 6J 6K 6L 6M 6N 6P R1(K) 2.2 4.7 4.7 22 2.2 100 47 R2(K) 2.2 4.7 47 47 47 100 22 1.0 WE ITR O N http://www.weitron.com.tw MUN5111 Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Current ( VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (VCE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 V V nA nA mA On Characteristics Collector-Emitter Saturation Voltage (IC =10mA, IE =0.3mA) (I C=10mA, I B =5mA) MUN5130/MUN5131 (IC =10mA, I B =1mA) MUN5115/MUN5116 MUN5132/MUN5133/MUN5134 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) 0.25 Vdc WEITRON http://www.weitron.com.tw MUN5111 Series Electrical Characteristics (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics On Characteristics (3) DC Current Gain ( VCE=-10V, IC =-5.0mA) MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 h FE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Output Voltage(on) ( VCC=5.0V, VB =2.5V, R L =1.0k Ω ) VOL ( VCC =5.0V, VB =3.5V, RL =1.0k Ω ) (VCC=5.0V, V B=5.5V, R L =1.0k Ω ) (VCC=5.0V, VB =4.0V, RL =1.0k Ω ) Output Voltage(off ) (VCC=5.0V, VB =0.5V, R L =1.0k Ω ) (VCC =5.0V, VB =0.05V, R L=1.0k Ω ) MUN5130 MUN5115 (VCC =5.0V, VB =0.25V, R L=1.0k Ω ) MUN5116 MUN5131 MUN5133 3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% V V VOH Vdc WEITRON http://www.weitron.com.tw MUN5111 Series Electrical Characteristics On Characteristics Input Resistor MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 0.8 0.055 0.38 0.038 1.7 (TA=25 C Unless Otherwise noted) WE IT R ON Symbol Min Typ Max Unit Characteristics 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 kΩ Resistor Ratio MUN5111/MUN5112/MUN5113 MUN5136 MUN5114 MUN5115/MUN5116 MUN5130/MUN5131/MUN5132 MUN5133 MUN5134 MUN5135 MUN5137 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 % R1/R2 MUN51111T1 Series ALL MUN511 1 SERIES DEVICES 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 R θJA = 833 C/W 50 0 - 50 0 50 100 TA , AMBIENT TEMPERA TURE ( C) 150 FIG.1 Derating Curve WEITRON http://www.weitron.com.tw MUN5111 Series MUN51111 Series WE IT R ON 1000 TYPCIAL ELECTRICAL CHARACTERISTICS-MUN5135 1 V C E (s at) , MAXIMUM C OLLE C T OR V OLT AG E (V OLT S ) hF E , DC C UR R E NT G AIN 75 C 100 25 C 10 -25 C 0.1 75 C 25 C -25 C 0.01 0 5 10 15 20 25 I C , C OLLE C T OR C UR R E NT (mA) 30 35 1 0 20 40 60 80 100 I C , C OLLE C T OR C UR R E NT (mA) 120 FIG.2 Maximum Collector Voltage versus Collector Current 10 9 C ob , C AP AC IT ANC E (pF ) 8 7 6 5 4 3 2 1 0 I C , C OLLE C T OR C UR R E NT (mA) 100 75 C 10 FIG.3 DC Current Gain -25 C 25 C 1 0.1 0 10 20 30 40 50 V R , R E V E R S E B IAS V OLT AG E (V OLT S ) 60 0.01 0 1 2 3 4 5 6 7 8 9 10 V in , INP UT V OLT AG E (V OLT S ) FIG.4 Output Capacitance 10 V in , INP UT V OLT AG E (V OLT S ) FIG.5 Output Current versus Input Voltage -25 C 75 C 1 25 C 0.1 0 5 10 15 20 25 30 35 40 I C , OUT P UT C UR R E NT (mA) 45 50 FIG.6 Input Voltage versus Output Current WEITRON http://www.weitron.com.tw MUN5111 Series SOT-323 Outline Demensions Unit:mm A SOT-323 B C T OP V IE W D E G H K L J M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw
MUN5135
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于工业控制、消费电子等领域。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考芯片手册。

4. 参数特性:主频72MHz,内置64KB Flash和20KB RAM,工作电压2.0V至3.6V,工作温度范围-40至+85摄氏度。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等模块的详细功能描述。

6. 应用信息:适用于需要高性能处理和丰富外设接口的应用场景,如电机控制、工业自动化等。

7. 封装信息:采用LQFP48封装,尺寸7x7mm,共有48个引脚。
MUN5135 价格&库存

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