MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon
6 5 4
65
Q2
R2 R1
1 2
R1
4
R2
1 2 3
Q1
3
SOT-363(SC-88)
M ax i mum R ati ngs ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Value -50 -50 -100 Unit Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range
Symbol PD R θJA TJ,Tstg
Max 187 1.5 493 325 -55 to +150
Unit mW mW/ C C/W C
1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad
Device Marking and Resistor Values
Device
MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130
l
Marking
0A 0B 0C 0D 0E 0F 0G
R1(K)
10 22 47 10 10 4.7 1.0
R2(K)
10 22 47 47 88
Device
MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137
Marking
0H 0J 0K 0L 0M 0N 0P
R1(K)
2.2 4.7 4.7 22 2.2 100 47
R2(K)
2.2 4.7 47 47 47 100 22
1.0
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Rev.A 20-Jan-09
MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (IC=-2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=-10 uA ,IE=0) Collector-Base Cutoff Voltage ( VCB=-50 V, IE =0) Collector-Emitter Cutoff Current (ICE=-50V, IB =0) Emitter-Base Cutoff Current (VEB=-6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW IEBO -50 -50 -100 -500 -0.5 -0.2 -0.1 -0.2 -0.9 -1.9 -4.3 -2.3 -1.5 -0.18 -0.13 -0.2 -0.05 -0.13 V V nA nA mA
On Characteristics
Collector-Emitter Saturation Voltage (IC =-10mA, IE =-0.3mA) (IC =-10mA, I B =--5mA) MUN5137DW/MUN5131DW (IC =-10mA, I B =--1mA) MUN5115DW/MUN5116DW MUN5132DW/MUN5133DW/MUN5134DW 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) -0.25 Vdc
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MUN5111DW Series
Electrical Characteristics On Characteristics (3)
DC Current Gain ( VCE=-10V, IC =-5.0mA) MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW h FE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 -4.9 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 Vdc (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Output Voltage(on) ( VCC=-5.0V, VB =-2.5V, RL =1.0k Ω )
VOL
(VCC =-5.0V, VB =-3.5V, R L =1.0k Ω ) (VCC=-5.0V, V B=-5.5V, R L=1.0k Ω ) (VCC=-5.0V, VB =-4.0V, R L =1.0k Ω )
Output Voltage(off ) (VCC =-5.0V, VB =-0.5V, R L =1.0k Ω ) (VCC =-5.0V, VB =-0.05V, RL =1.0k Ω ) MUN5130DW MUN5115DW (VCC =-5.0V, VB =-0.25V, RL =1.0k Ω ) MUN5116DW MUN5131DW MUN5133DW 3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% V V
VOH
Vdc
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Rev.A 20-Jan-09
MUN5111DW Series
Electrical Characteristics On Characteristics
Input Resistor MUN5111DW MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 kΩ (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Resistor Ratio MUN5111DW/MUN5112DW MUN5113DW/MUN5136DW MUN5114DW MUN5115DW/MUN5116DW MUN5130DW/MUN5131DW/MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5137DW 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
R1/R2
MUN5111DW1T1 Series
ALL MUN511 1DW1T1 SERIES DEVICES
300 PD , P OWE R DIS S IP AT ION (mW) 250 200 150 100 50 0 - 50 R θJ A = 4 90 C /W 0 50 100 T A , AMB IE NT T E MP E R AT UR E ( 5C ) 150
FIG.1 Derating Curve - ALL DEVICES
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Rev.A 20-Jan-09
MUN5111DW Series
MUN51 1 1DW Series TYPICAL ELECTRICAL CHARACTERISTICS- MUN5111DW
VCE(sat), COLLECTOR VOLTAGE (VOLTS) IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1 1000 VCE = 10 V
TA = -25 C 0.1 75 C 25 C
TA = 75 C 25 C 100 -25 C
0.01 0
10 20 IC, COLLECTOR CURRENT (mA) 40 50
1
10 IC , COLLECTOR CURRENT (mA)
100
FIG.2 V CE(sat) versus I C
FIG.3 DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25 C
100
75 C
25 C TA = -25 C
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
1
0.01 1 2
VO = 5 V 3 4 5 6 7 Vin , INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR , REVERSE BIAS VOLTAGE (VOLTS)
50
0.001 0
FIG.4 Output Capacitance
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
FIG.5 Output Current versus Input Voltage
10
TA = -25 C 25 C 75 C
1
0.1 0
10
20 30 IC , COLLECTOR CURRENT (mA)
40
50
FIG.6 Input Voltage versus Output Current
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Rev.A 20-Jan-09
MUN5111DW Series
MUN5111DW Sewries TYPICAL ELECTRICAL CHARACTERISTICS-MUN5112DW
V CE(sat) , COLLECTOR VOLTAGE (VOLTS) 10 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 1000 VCE = 10 V
1 TA = -25 C
25 C
TA = 75 C 25 C 100 -25 C
75 C 0.1
0.01
0
20 IC , COLLECTOR CURRENT (mA)
40
50
10
1
10 IC , COLLECTOR CURRENT (mA)
100
FIG.7 VCE(sat) versus I C
4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25 C 100 75 C 10
FIG.8 DC Current Gain
25 C TA = -25 C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01 0.001 0 1 2 3 4 5 6 7 Vin , INPUT VOLTAGE (VOLTS)
VO = 5 V 8 9 10
0
0
10 20 30 40 VR , REVERSE BIAS VOLTAGE (VOLTS)
50
FIG.9 Output Capacitance
100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25 C 10 75 C
FIG.10 Output Current versus Input Voltage
25 C
1
0.1
0
10
20 30 IC , COLLECTOR CURRENT (mA)
40
50
FIG.11 Input Voltage versus Output Current
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Rev.A 20-Jan-09
MUN5111DW Series
MUN5111DW Series TYPICAL ELECTRICAL CHARACTERISTICS-MUN5112DW
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 1000 VCE = 10 V TA = 75 C 25 C 100 -25 C
TA = -25 C 75 C 0.1
25 C
0.01 0
10 20 30 IC , COLLECTOR CURRENT (mA)
40
10
1
10 IC , COLLECTOR CURRENT (mA)
100
FIG.12 VCE(sat) versus I C
1 0.8 Cob , CAPACITANCE (pF) f = 1 MHz lE = 0 V TA = 25 C 100
FIG.13 DC Current Gain
TA = 75 C 25 C -25 C
0.6 0.4
IC , COLLECTOR CURRENT (mA)
10 1
0.1 0.01 VO = 5 V 1 2 3 41 5 6 7 Vin , INPUT VOLTAGE (VOLTS) 8 9 10
0.2 0
0
10 20 30 40 VR , REVERSE BIAS VOLTAGE(VOLTS)
50
0.001 0
FIG.14 Output Capacitance
100
FIG.15 Output Current versus Input Voltage
VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25 C 10 25 C 75 C
1
0.1
0
10
20 30 IC , COLLECTOR CURRENT (mA)
40
50
FIG.16 Input Voltage versus Output Current
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MUN5111DW Series
MUN5111DW Series TYPICAL ELECTRICAL CHARACTERISTICS-MUN5114DW
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25 C 25 C 75 C 180 160 VCE = 10 V 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC , COLLECTOR CURRENT (mA) 25 C -25 C TA = 75 C
0.1
0.01
0.001
0
20 40 60 IC , COLLECTOR CURRENT (mA)
80
FIG.17 VCE(sat) versus IC
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR , REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25 C 100
FIG.18 DC Current Gain
TA = 75 C IC , COLLECTOR CURRENT (mA)
25 C
-25 C 10
VO = 5 V 1 0 2 4 6 Vin , INPUT VOLTAGE (VOLTS) 8 10
FIG.19 Output Capacitance
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
FIG.20 Output Current versus Input Voltage
25 C TA = -25 C 75 C
1
0.1
0
10
20 30 40 IC , COLLECTOR CURRENT (mA)
50
FIG.21 Input Voltage versus Output Current
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MUN5111DW Series
MUN5111DW Series TYPICAL ELECTRICAL CHARACTERISTICS-MUN5115DW
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100 1 10 100
I C , COLLECTOR CURRENT (mA)
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5116DW
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100 1 10 100
I C , COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
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MUN5111DW Series
MUN5111DW Series TYPICAL ELECTRICAL CHARACTERISTICS-MUN5136DW
V C E (s at) , C OLLE C T OR V OLT AG E (V OLT S ) hF E , DC C UR R E NT G AIN (NOR MALIZE D) 1 1000 75 C 100 T A = -25 C
25 C
0.1 -25 C 25 C 75 C
10
I C /I B = 1 0 0.01 0 1 2 3 4 5 I C , C OLLE C T OR C UR R E NT (mA) 6 7
V C E = 10 V 1 1 10 I C , C OLLE C T OR C UR R E NT (mA) 100
FIG.62 VCE(sat) versus IC
100 f = 1 MHz IE = 0 V TA = 25 C I C , C OLLE C T OR C UR R E NT (mA)
FIG.63 DC Current Gain
1.2 C ob , C AP AC IT ANC E (pF ) 1.0 0.8 0.6 0.4 0.2 0
25 C 10
75 C
T A = -25 C
1 VO = 5 V V =5V 0.1 0 1 2 3 4 5 6 7 8 9 10
0
10 20 30 40 50 V R , R E V E R S E B IAS V OLT AG E (V OLT S )
60
V in , INP UT V OLT AG E (V OLT S )
FIG.64 Output Capacitance
100 V in , INP UT V OLT AG E (V OLT S )
FIG.65 Output Current versus Input Voltage
25 C 10
T A = -25 C
1
75 C 0 2
V O = 0 .2 V 4 6 8 10 12 14 16 I C , C OLLE C T OR C UR R E NT (mA) 18 20
FIG.66 Input Voltage versus Output Current
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MUN5111DW Series
MUN5111DW Series TYPICAL ELECTRICAL CHARACTERISTICS-MUN5137DW
V C E (s at) , C OLLE C T OR V OLT AG E (V OLT S ) hF E , DC C UR R E NT G AIN (NOR MALIZE D) 1 1000
75 C T A = -25 C 25 C
T A = -25 C 0.1 75 C
100
25 C I C /I B = 1 0 0 5 10 15 20 25 30 35 40 I C , C OLLE C T OR C UR R E NT (mA) 45 50
V C E = 10 V 10 1 10 I C , C OLLE C T OR C UR R E NT (mA) 100
0.01
FIG.67 VCE(sat) versus IC
100 I C , C OLLE C T OR C UR R E NT (mA) f = 1 MHz IE = 0 V TA = 25 C
FIG.68 DC Current Gain
1.4 C ob , C AP AC IT ANC E (pF ) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 V R , R E V E R S E B IAS V OLT AG E (V OLT S ) 60
75 C T A = -25 C 25 C
10
1
0.1 0.01
VO = 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
11
V in , INP UT V OLT AG E (V OLT S )
FIG. 69 Output Capacitance
100 V in, INP UT V OLT AG E (V OLT S )
FIG.70 Output Current versus Input Voltage
V O = 0 .2 V
10
T A = -25 C
75 C
1
25 C 0 5 10 15 20 I C , C OLLE C T OR C UR R E NT (mA) 25
FIG.71 Input Voltage versus Output Current
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Rev.A 20-Jan-09
MUN5111 Series
SOT-363 Package Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
BC
1 2 3
D
E
H K J L M
Dim A B C D E H J K L M
Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25
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