MXTA42

MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 300 300 5.0 500 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range Symbol PD R θJA TJ,Tstg Max 500 4.0 250 -55 to +150 Unit mW mW/ C C/W C Device Marking MXTA42=A42 Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) Collector Cutoff Current (VCB= 200 Vdc, IE=0) Emitter Cutoff Current (VEB= 5.0 Vdc, IC =0) 1.FR-5=1.0 x 0.75 x 0.062 in. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 300 300 5.0 - Max 0.25 0.1 Unit Vdc Vdc Vdc uAdc uAdc WE ITR O N http://www.weitron.com.tw MXTA42 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC= 1 mAdc, VCE=10 Vdc) (IC= 10 mAdc, VCE=10 Vdc) (IC=30 mAdc, VCE=10 Vdc) Collector-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2 mAdc) Base-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2 mAdc) Transition Frequency (VCE =20 Vdc, IC =10 mAdc, f=30MHz) hFE (1) hFE (2) hFE (3) VCE(sat) VBE(sat) fT 60 80 75 50 250 0.2 0.9 - Vdc Vdc MHz Classification of hFE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250 WEITRON http://www.weitron.com.tw MXTA42 Typical Characteristics 120 hFE, DC CURRENT GAIN WE IT R ON 100 80 60 40 Tj=+125 C 25 C -55 C 20 0 0.1 1.0 I C , COLLECTOR CURRENT (mA) 10 100 FIG. 1 DC Current Gain 1.4 1.2 V, VOLTAGE (VOLTS) VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V 0.1 1.0 10 100 1.0 0.8 0.6 0.4 0.2 00 IC, COLLECTOR CURRENT (mA) FIG.2 "On"Voltages 80 f T , CURRENT-GAIN-BANDWIDTH (MHz) 70 60 50 40 30 20 10 1.0 Tj=25 C VEC=20V f=20MHz 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) FIG.3 Current-Gain-Bandwidth WEITRON http://www.weitron.com.tw MXTA42 SOT-89 Outline Dimensions W E IT R ON unit:mm SOT-89 E G A J C H K L B D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw