SS8050

SS8050 NPN General Purpose Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation TA=25°C Junction and Storage, Temperature Symbol VCBO VCEO VEBO IC PD TJ,Tstg Value 40 25 5 1.5 1.0 -55 to +150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) Characteristics Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=0.1mA, IB=0 Emitter Base Breakdown Voltage IE=100µA, IC=0 Collector cut-off current VCB=40V, IE=0 Emitter cut-off current VCE=20V, IE=0 Emitter cut-off current VEB=5V, IC=0 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Min 40 25 5 - Typ - Max 0.1 0.1 0.1 Unit V V V µA µA µA WEITRON http://www.weitron.com.tw 1/4 19-Jul-05 SS8050 ON CHARACTERISTICS DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=800 mA Collector-Emitter Saturation Voltage IC=800mA, IB=80mA Base-Emitter Saturation Voltage IC=800mA, IB=80mA Base-Emitter ON Voltage VCE=1V, IC=10mA) hFE(1) hFE(2) VCE(sat) VBE(sat) VBE(ON) 85 40 400 0.5 1.2 1 V V V DYNAMIC CHARACTERISTICS Transition frequency VCE=10 V, IC=50 mA, f=30MHz fT 100 MHz CLASSIFICATION OF hFE(2) Rank Range B 85-160 C 120-200 D 160-300 E 300-400 WEITRON http://www.weitron.com.tw 2/4 19-Jul-05 SS8050 0.5 I C , CO LLECTOR CURRENT (mA) 1000 IB= 3.0mA hFE, DC CURRENT GAIN VCE = 1V 0.4 0.3 0.2 0.1 0 IB= 2.5mA IB= 2.0mA IB= 1.5mA IB= 1.0mA IB= 0.5mA 0 0.4 0.8 1.2 1.6 2.0 100 10 1 0.1 1 10 100 1000 FIG.1 Static Characteristic VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) I C , CO LLECTOR CURRENT (mA) FIG.2 DC Current Gain VBE(s a t), VCE(s a t) , SATURAT ION VOLTAGE (mA) 100 I C , COLLECTOR CURRENT (mA) 10000 VCE = 1V I C =10 IB V BE (sat ) 10 1000 1 100 VCE (sat ) 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 VBE, BASE- EMITTER VOLTAGE (VoLTS) I C , COLL CTOR CURRENT (mA) E FIG.3 Base-Emitter On Voltage FIG.4 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT , CURRENT GAIN BANDWIDTH PRODUC T (MHz) 1000 1000 VCE = 10V Cob,CAPACITANCE(PF) 100 100 f=1.0 MHz IE=0 10 10 1 1 10 100 400 1 10 VCE,COLLECTOR-BASE VOLTAGE(V) 100 IC,COLLECTORN CURRENT FIG.5 Current Gain Bandwidth Product FIG.6 Collector Output Capacitance http://www.weitron.com.tw WEITRON 3/4 19-Jul-05 SS8050 TO-92 Outline Dimensions E unit:mm TO-92 C J K G Dim A B C D E G H J K L H Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 4/4 19-Jul-05