SS8050LT1_09

SS8050LT1 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 0.1 100 100 25 40 5.0 O 0.15 0.15 0.15 u E=20 Vdc, I E= 0 ) 35 4.0 u u WEITRON http://www.weitron.com.tw 1/4 Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) hFE (1) 120 600 - VCE(sat) - 0.5 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=50 mAdc, VCE=10 Vdc, f=30MHz) fT 100 MHz CLASSIFICATION OF hFE(1) Rank Range Marking P 120-200 1HA Q 150-300 1HC R 200-400 1HE S 300-600 1HG WEITRON http://www.weitron.com.tw 2/4 Rev.A 10-Apr-09 SS8050LT1 I C , CO LLECTOR CURRENT (mA) 0.5 1 000 VCE = 1V IB = 3.0m A 0.4 hFE, DC C URRENT GAIN 2.0 IB = 2.5m A 0.3 100 IB = 2.0m A IB = 1.5m A IB = 1.0m A 0.2 10 0.1 IB = 0.5m A 1 0.1 0 0.4 0 .8 1.2 1 .6 1 10 100 1 000 VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) I C , CO LLECTOR CURRE NT (mA) FIG.1 Static Characteristic FIG.2 DC Current Gain VBE(s a t), VCE(s a t) , SATURATION VOLTAGE (mA) 100 00 100 IC = 10 IB I C , COLLECTOR CURRENT (mA) VCE = 1V V BE(sat) 100 0 10 100 1 V CE(sat) 10 0.1 1 10 100 100 0 0.1 0.0 0 .2 0.4 0 .6 0.8 1 .0 1.2 I C , COLL CTOR CURRENT (mA) E VBE, BASE- EMITTER VOLTAGE (VoLTS) FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage FIG.4 Base-Emitter On Voltage fT , CURRENT GAIN BANDWIDTH PRODUC T (MHz) 1000 VCE = 10V 100 10 1 1 10 100 400 I C , COLLECTOR CURRE NT FIG.5 Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw 3/4 Rev.A 10-Apr-09 SS8050LT1 SOT-23 Outline Dimension SOT-23 A TOP VIEW B C D E G H K L J M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 Rev.A 10-Apr-09