STS2622

WTL2622 Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free 1 GATE 6 DRAIN DRAIN CURRENT 2.5 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1, VGS@4.5V, TA=25˚C -Pulsed2 Drain-Source Diode Forward Current1 Total Power Dissipation1 (TA=25˚C) Maximum Junction-ambient1 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ±10 2.5 8 1.25 1 125 -55~+150 W ˚C/W ˚C A Unit V Device Marking WTL2622=STS2622 http:www.weitron.com.tw WEITRON 1/6 19-Sep-05 WTL2622 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ3 Max Unit OFF Characteristics Drain-Source Breakdown Voltage VGS=0,ID=250 μA Drain-SourceLeakage Current VDS=16V,VGS=0V Gate-Source Leakage current VGS=±10V, VDS=0V BVDSS IDSS IGSS 20 1 ±100 V μA nA ON Characteristics2 Gate-Source Threshold Voltage VDS=VGS,ID=250 μA Drain-SourceOn-Resistance VGS=4.5V,I D=2.5A VGS=2.5V,ID=2.0A On-State Drain Current VDS=5V,VGS=4.5V Forward Transconductance VDS=5V,I D=2.5A VGS(Th) RDS(on) 0.5 6 0.8 65 90 7 1.5 80 110 V mΩ ID(ON) gfs A S Dynamic Characteristics3 Input Capacitance VGS=0V,VDS=10V,f=1.0MHz Output Capacitance VGS=0V,VDS=10V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=10V,f=1.0MHz Ciss Coss Crss 220 67 50 pF http:www.weitron.com.tw WEITRON 2/6 19-Sep-05 WTL2622 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ3 Max Unit Switching Characteristics3 Turn-on Delay Time2 VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω Rise Time VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω Turn-off Delay Time VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω Fall Time VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω Total Gate Charge2 VDS=10V,VGS=4.5V,I D=2.5A G ate-Source Cha rge VDS=10V,VGS=4.5V,I D=2.5A G ate-Source Change VDS=10V,VGS=4.5V,I D=2.5A td(on) tr td(off) tf Qg Qgs Qgd 10.2 8.3 13.5 12.7 4 1.5 0.7 ns nC Source-Drain Diode Characteristics2 Forward On Voltage VGS=0V,IS=1.25A VSD 0.84 1.2 V Note: 1. Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec. 2. Pulse Test : Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Guaranteed by design, not subject to production testing. http:www.weitron.com.tw WEITRON 3/6 19-Sep-05 WTL2622 20 VGS=10V VGS=4V 15 25 C VGS=4.5V VGS=3V 16 12 -55 C ID, Drain Current(A) ID, Drain Current (A) Tj=125 C 12 8 VGS=2V 9 6 3 0 0.0 4 0 0 0.5 1 1.5 2 2.5 3 0.6 1.2 1.8 2.4 3.0 3.6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig.1 Output Characteristics Fig.2 Transfer Characteristics 2.2 500 400 300 200 100 0 Crss Ciss 1.8 VGS=4.5V ID=2.5A RDS(ON), On-Resistance Normalized C, Capacitance (pF) 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 Tj (˚C) Coss 0 5 10 15 20 25 30 75 100 125 VDS, Drain-to Source Voltage (V) Fig.3 Capacitance with Drain to Source Voltage Fig.4 On-Resistance Variation with Temperature 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 VDS=VGS ID=250uA 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 75 100 125 0 25 50 75 100 125 Tj, Junction Temperature (˚C) Tj, Junction Temperature (˚C) Fig.5 Gate Threshold Voltage Variation with Temperature Fig.6 Breakdown Voltage Variation with Temperature WEITRON http://www.weitron.com.tw 4/6 19-Sep-05 WTL2622 12 10 20 10 gFS, Transconductance (S) 8 6 4 2 0 Is, Source-drain current (A) 1 0 VDS=5V 0 3 6 9 12 15 TJ=25˚C 0.4 0.8 1.2 1.6 2.0 2.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Fig.7 Transconductance Variation with Drain Current Fig.8 Body Diode Forward Voltage Variation with Source Current 5 50 VGS, Gate to Source Voltage (V) 4 3 2 1 0 0 VDS=4.5V ID=2.5A ID, Drain Current (A) 10 RD ON S( )L im it 10 10 0m s ms 1 DC 1s 0.1 0.03 0.1 VGS=4.5V Single Pulse Tc=25˚C 1 10 20 50 0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig.9 Gate Charge Fig.10 Maximum Safe Operating Area V DD ton V IN D VGS R GEN G 90% toff tr 90% RL V OUT td(on) V OUT td(off ) 90% 10% tf 10% INVERTED S V IN 50% 10% 50% PULSE WIDTH Fig.11 Switching Test Circuit Fig.12 Switching Waveforms WEITRON http://www.weitron.com.tw 5/6 19-Sep-05 WTL2622 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = PDM* RθJA (t) 4. Duty Cycle, D=t1/t2 t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve SOT-26 Outline Dimension A G Unit:mm SOT-26 Dim A B C D E F F1 G H I J K L Min 2.70 2.60 1.40 0.30 0.00 0˚ 0.08 Max 3.10 3.00 1.80 0.55 0.10 10˚ 0.25 Top View B C L Front View H F1 F J Side View K D 1.90 REF 1.20 REF 0.12 REF 0.37 REF 0.60 REF 0.95 REF WEITRON http://www.weitron.com.tw E 6/6 I 19-Sep-05