US1G

US1A Thru US1M Surface Mount Ultra Fast Rectifiers REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current * Low Forward Voltage Drop And High Current Capability * Ultra Fast Switching For High Efficiency * Plastic Meterial Has UL Flammability Classification 94V-0 Mechanical Data * Case : Molded Plastic * Terminals: Solder Plated Terminal-Solderable per MIL-STD-202, Method 208 * Polarity :Indicated by cathode band * Weight : 0.002 Ounce ,0.064 grams SMA(DO-214AC) SMA Outline Dimension B Unit:mm A C D J H E G Dim A B C D E G H J SMA Min 2.20 4.00 1.27 0.15 4.48 0.10 0.76 1.70 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62 WEITRON http://www.weitron.com.tw US1A Thru US1M Maximum Ratings and Electrical Characteristics Rating 25 C Ambient Temperature Unless Otherwise Specified. Single Phase Half Wave, 60Hz , Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%. Characteristics Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @T T =75 C Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous At 1.0A DC Maximum DC Reverse Current @T A =25 C At Rated DC Blocking Voltage @T A =100 C Maximun Reverse Recocery Time(Note1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Symbol US1A US1B US1D US1G US1J US1K US1M Unit VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 1.0 400 280 400 600 420 600 800 560 800 1000 700 1000 V A IFSM VF IR Trr CJ 30 A 1.0 5.0 100 50 20 75 1.30 1.70 V uA 100 10 nS PF C/W R JT TJ TSTG -55 to+150 -55 to+150 C C NOTES:1.Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR =0.25A. 2.Measured at 1.0MHz applied reverse voltage of 4.0V DC. 3.Unit Mounted on PC board with 5.0 mm2(0.03mm thick) land areas. WEITRON http://www.weitron.com.tw US1A thru US1M I F , INS T ANT ANE OUS F OR W AR D C UR R E NT (A) 10 I (AV) , AVE R AG E R E C T IF IE D C UR R E NT (A) 1.0 US 1A - US 1D US 1G 1.0 US 1J - US 1M 0.5 0.1 0 25 50 75 100 125 150 0.01 0 0. 4 0. 8 1.2 1 .6 2.0 V F , INS T ANT ANE OUS F OR W AR D V OLT AG E (V ) F IG .2 Tpical F orward C haracteris tics 1000 T T , T E R MINAL T E MP E R AT UR E ( ° C ) F IG . 1 F orward C urrent Deratin C urve I F S M, P E AK F OR W A R D S UR G E C UR R E NT (A) 40 S ingle H alf S ine-W a ve (J E DE C Method) 30 100 T j = 100° C 10 20 1.0 T j = 25° C 10 T j = 150° C 0.1 0 1 10 100 NUMB E R O F C Y C LE S A T 6 0Hz F IG . 3 F orward S urge C urrent Derating C urve trr +0.5A 0.01 0 20 40 60 80 100 120 140 P E R C E NT O F R AT E D P E AK R E V E R S E V OLT A G E (% ) F IG. . 4 T ypical R evers e C haracteris tics 0A -0.25A (+) 50V DC Approx Device Under Tes t (-) P uls e G enerator (Note 2 ) Os cillos cope (Note 1 ) (-) (+) -1.0A S et time bas e for 5 0/100 ns /cm F IG. . 5 R evers e R ecovery T ime C haracteris tic and Tes t C ircuit WEITRON http://www.weitron.com.tw