WAN222

WEITRON Surface Mount Switching Diode Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability Applications: Ultra High Speed Switching WAN222 SWITCHING DIODE 100m AMPERRES 80 VOLTS SC-89 (SOT-523F) SC-89 Outline Demensions Unit:mm A 3 T OP V IE W 2 1 K G D B S M C J N Dim A B C D G J K M N S SC-89 Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70 http://www.weitron.com.tw WEITRON 1/3 10-Jul-09 WAN222 Maximum Ratings Characteristic Non-Repetitive Reverse Voltage DC Reverse Voltage Forward Current Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current @t=1us (EACH DIODE) Symbol VRM VR IF IFM IFSM Value 80 80 100 300 4 Unit Volts Volts mAdc mAdc Adc Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Symbol PD R JA TJ, Tstg Max 150 1.2 833 -55 to + 150 Unit mW mW/ C C/W C Junction and Storage Temperature Electrical Characteristics Characteristic Reverse Breakdown Voltage (IR=100 uAdc) Reverse Voltage Leakage Current (VR=70V) *1 ER-5=1.0x0.75x0.062 in ( TA=25 C Unless Otherwise Note) (Each Diode) Symbol VBR IR CD VF trr Min 80 Max 0.1 3.5 1.2 4.0 Unit Vdc uAdc Diode Capacition (VR=6Vdc, f=1.0MHz) Forward Voltage (IF=100 mAdc) Reverse Recovery Time (Figure 1.) (IR=5.0 mAdc, VR=6.0 Vdc) PF Vdc nS Device Marking Item WAN222 Marking N9 Eqivalent Circuit diagram 3 1 2 WEITRON http://www.weitron.com.tw 2/3 10-Jul-09 WAN222 tr tp t 10% A RL 90% VR tp = 2 ms tr = 0 .35 ns Irr = 0.1 IR I F = 5 .0 mA VR = 6 V R L = 1 00 W IF trr t RECOVERY TIME EQUIV ALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE FIG.1 Reverse Recovery Time Test Circuit for the DAN222 100 IF, FOR WARD CURRENT (mA) TA = 85 C 10 TA = - 40 C IR , REVERSE CURRENT (mA) 10 TA = 150 C 1.0 TA = 125 C 0.1 TA = 85 C TA = 55 C 1.0 TA = 25 C 0.01 TA = 25 C 10 20 30 40 VR , REVERSE VOLTAGE (VOLTS) 50 0.1 0.2 0.4 0.6 0.8 1.0 VF, FOR WARD VOL AGE (VOLTS) T 1.2 0.001 0 FIG.2 Forward Voltage FIG.3 Reverse Current 1.0 C D , DIODE CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0 2 4 6 8 VR , REVERSE VOL TAGE (VOLTS) FIG.4 Diode Capacitance http://www.weitron.com.tw WEITRON 3/3 10-Jul-09