WIMN10

WIMN10 Surface Mount Switching Multi-Chip Diode Array P b Lead(Pb)-Free MULTI-CHIP DIODES 100m AMPERES 80 VOLTS Features: * Ultra High Speed Switching * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 6 1 TSOP-6 Mechanical Data: * Case : TSOP-6 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram TSOP-6 Outline Dimensions A Unit:mm TSOP-6 6 5 4 BC 1 2 3 D H K Ө L M Dim A B C D Ө H J K L M Min 0.25 1.30 2.50 0.85 0° 2.90 0.01 0.90 0.20 0.10 Max 0.50 1.70 3.00 1.05 10° 3.10 0.10 1.10 0.60 0.26 J WEITRON http://www.weitron.com.tw 1/3 04-Mar-09 WIMN10 Maximum Ratings @ TA= 25°C unless otherwise specified Characteristic Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Average Recti ed Output Current Non-Repetitive Peak Forward Surge Current @ t = 1.0s Power Dissipation (Note 1) Operating Temperature Range Storage Temperature Range Note 1 : Not to exceed 200mW per element. Symbol VRM VR IFM IO IFSM PD Tj TSTG Value 80 80 300 100 4.0 300 +150 -55 to +150 Unit V V mA mA A mW °C °C Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Forward Voltage IF = 100mA Reverse Current VR = 70V Capacitance between terminals VR = 6V, f = 1.0MHz Reverse Recovery Time VR = 6V, IF =5mA Symbol VF IR CT Trr Min - Max 1.2 0.1 3.5 4.0 Unit V µA pF ns Device Marking Item Marking Eqivalent Circuit diagram 1 2 3 6 5 4 WIMN10 N10 WEITRON http://www.weitron.com.tw 2/3 04-Mar-09 WIMN10 Typical Characteristics +10 V 820 Ω 2.0 k 0.1µF tr t t IF t rr t p 100 µH IF 10% 0.1 µF 50 Ω OUTPUT PULSE GENERATOR D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL VR IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE 100 10 I F , FORWARD CURRENT (mA) T A = 85°C 10 I R , REVERSE CURRENT (µ A) T A = 150°C 1.0 T A = 125°C T A = – 40°C 0.1 T A = 85°C T A = 55°C 1.0 T A = 25°C 0.0 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.00 1 0 10 T A = 25°C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.6 8 C D ,TOTAL CAPACITANCE (pF) 0.6 4 0.6 0 0.5 6 0.5 2 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance WEITRON http://www.weitron.com.tw 3/3 04-Mar-09