WOSD12

WOSD03/WOSD05 WOSD12 Surface Mount TVS Diodes Array for ESD Protection P b Lead(Pb)-Free FEATURES * ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact) * 300 Watts Peak Power Protection(tp=8/20 uS) * Excellent Clamping Capability * Low Leakage Current * Protects one I/O or Power line * Solid-state Silicon-avalanche Technology * Small Package for use in Portable Electronics * Transient Voltage Suppressors Encapsulated in a SOD-323 Package TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-12 VOLTS 1 2 SOD-323 MECHANICAL DATA * CASE: Molded Epoxy * TERMINAS: UL 94V-0 * WEIGHT: 0.0045 gram * MOUNTING POSITION: Any APPLICATIONS * Microprocessor based equipment * Notebooks, Desktops, and Servers * Cell Phone Handsets and Accessories * Personal Digital Assistants(PDA’s) * Portable Instrumentation * Pagers Peripherals SOD-323 Outline Dimensions Unit:mm 1 WEITRON http://www.weitron.com.tw 1/4 Rev.C 22-Jun-09 WOSD03/WOSD05 WOSD12 Maximum Ratings(TA=25˚C Unless Otherwise Noted) Characteristic Peak Pulse Power(tP = 8/20μs) ESD Voltage(HBM Waveform per IEC 61000-4-2) Lead Soldering Temperature Operating Temperature Range Storage Temperature Range Symbol PPK VESD TL TJ Tstg Votle 300 30 260(10s) -55 to +125 -55 to +150 Unit W kV °C °C °C ELECTRICAL CHARACTERISTICS ( T = 25˚C) WOSD03 TYPE NUMBER Reverse Stand-Off Voltage Reverse Breakdown Voltage It = 1mA Reverse Leakage Current VRWM = 3.3V Clamping Voltage IPP = 1A,tP = 8/20μs IPP = 5A,tP = 8/20μs Peak Pulse Current tP = 8/20μs Junction Capacitance VR = 0V,f = 1MHz Device Marking Symbol VRWM VBR IR VC IPP Cj Min Typ Max Unit 5 - 3D 4 20 7 8.5 12 350 V V μA V A pF WOSD05 TYPE NUMBER Reverse Stand-Off Voltage Reverse Breakdown Voltage It = 1mA Reverse Leakage Current VRWM = 5V Clamping Voltage IPP = 5A,tP = 8/20 s IPP = 24A,tP = 8/20 s Peak Pulse Current tP = 8/20 s Junction Capacitance VR = 0V,f = 1MHz Device Marking Symbol VRWM VBR IR VC IPP Cj Min Typ Max Unit 6 - ZA 5 10 9.8 14.5 24 350 V V A V A pF http://www.weitron.com.tw WEITRON 2/4 Rev.C 22-Jun-09 WOSD03/WOSD05 WOSD12 ELECTRICAL CHARACTERISTICS ( TA=25˚C Unless Otherwise Noted) WOSD12 TYPE NUMBER Reverse Stand-Off Voltage Reverse Breakdown Voltage It = 1mA Reverse Leakage Current VRWM = 12V Clamping Voltage IPP = 5A,tP = 8/20 s IPP = 15A,tP = 8/20 s Peak Pulse Current tP = 8/20 s Junction Capacitance VR = 1V,f = 1MHz Device Marking Symbol VRWM VBR IR VC IPP Cj Min Typ Max Unit 13.3 - 6u , ZC 12 1 19 25 15 90 V V A V A pF ELECTRICAL CHARACTERISTICS CURVES 10 110 100 90 80 70 60 50 40 30 20 10 0.01 0.1 0 1 10 100 1000 0 25 50 75 100 125 150 Peak Pulse Power - Ppk(kW) 1 0.1 Pulse Duration - tp(μs) % of Rated Power of IPP Ambient Temperature - TA(˚C) Fig.1 Non-Repetitive Peak Pulse Power vs. Pulse Time Fig.2 Power Derating Curve http://www.weitron.com.tw WEITRON 3/4 Rev.C 22-Jun-09 WOSD03/WOSD05 WOSD12 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Clamping Voltage - VC (V) Waveform Pa rameters tr = 8µs td = 20µs e -t 30 25 20 15 10 5 0 0 5 10 15 WOSD03/WOSD05 WOSD12 Waveform Parameters tr = 8µs td = 20µs Percent of IPP td = IPP/2 20 25 30 Time (µs) Peak Pulse Current - IPP(A) Fig.3 Pulse Waveform Fig.4 Clamping Voltage vs. Peak Pulse Current 350 300 f =1MHz 7.00 6.00 WOSD12 Forward Voltage - VF (V) Capacitance - Cj (pF) 250 200 150 100 50 0 5.00 4.00 3.00 2.00 1.00 0.00 Waveform Parameters: tr = 8µs td = 10µs 0 5 10 15 20 25 30 35 40 45 WOSD03/WOSD05 WOSD03/WOSD05 WOSD12 0 2 4 6 8 10 12 14 Reverse Voltage - VR(V) Forward Current - IF(A) Fig.5 Capacitance vs. Reverse Voltage Fig.6 Forward Voltage vs. Forward Current http://www.weitron.com.tw WEITRON 4/4 Rev.C 22-Jun-09