WSD109H

WSD109H Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 90 VOLTS *Extremely Fast Switching Speed *Low Forward Voltage *Low Leakage Current *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Features: Description These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, extremely low forward voltage reduces conduction loss, miniature surface mount package is excellent for hand held and portable applications where space is limited. SOD-323 SOD-323 Outline Dimensions MILLMETERS Dim Min Max 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 D 0.25 0.40 E 0.15REF H 0.00 0.10 J 0.089 0 .1 7 7 K 2.30 2.70 PIN 1.CATHODE 2.ANODE Unit:mm WEITRON http://www.weitron.com.tw WSD109H Maximum Ratings (TJ=125 C Unless otherwise noted) Characteristic Reverse Voltage Average Rectifier Forward Current Peak Forward Surge Current Operating Junction Temperature Range Storage Temperature Range Symbol VR IF(AV) IFM(Surge) TJ Tstg WSD109H 90 100 500 -55 to +125 -55 to +150 Unit Volts mA mA C C Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)R VF CD Min 90 Max Unit Volts Reverse Breakdown Voltage (IR=100µA) Forward Voltage IF=100mA Total Capacitance (VR=0V) Reverse Leakage Current VR=50V VR=90V 0.90 2.5 0.5 1.0 Volts PF IR µAdc Device Marking Item WSD109H Marking 5A Eqivalent Circuit diagram 1 2 WEITRON http://www.weitron.com.tw WSD109H 0.68 CD, DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Capacitance 100 10 TA=85 C 10 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) TA=150 C 1.0 TA=125 C TA= -40 C 1.0 0.1 TA=85 C TA=25 C 0.01 TA=55 C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 TA=25 C 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current WEITRON http://www.weitron.com.tw