WSD450F

WSD450F Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 40 VOLTS Features: *Small mold type. *Low IR *High reliability. 3 Construction: Silicon epitaxial planer 1 2 SOT-323(SC-70) SOT-323 Outline Demensions Unit:mm A T O P V IE W B C D E G H K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON hpp://www.weitron.com.tw 1/3 16-Aug-07 WSD450F MaximumRatings Characteristic Reverse Voltage (repetitive peak) Reverse Voltage (DC) Average rectified forward current Forward Current surge peak (60Hz, 1cyc) Operating Junction Temperature Range Storage Temperature Range ( Ta=25°C Unless otherwise noted) Symbol VRM VR IO IFSM TJ Tstg Value 45 40 100 1 125 -40 to +125 WEITRON Unit Volts mA mA A °C °C ElectricalCharacteristics Characteristic Forward Voltage IF=10mA Capacitance between terminals ( VR=10V, f=1.0MHz) Reverse currect ( VR=10V ) ( TA=25 C Unless otherwise noted) Symbol VF CT IR Min Typ 6.0 Max 0.45 1.0 Unit Volts PF µAdc DeviceMarking Item WSD450F Marking B4 , KL5 EqivalentCir cuitdiagram 3 1 http://www.weitron.com.tw WEITRON 2/3 16-Aug-07 WSD450F 1 1m WEITRON FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 100m 100µ Ta= 125°C Ta =1 25 °C 75 °C 25 °C 25 °C 10m 10µ 75°C 1m 1µ 25°C 100µ 100n 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10n 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 50 100 20 10 5 Io CURRENT (%) 2 4 6 8 10 12 14 80 60 40 20 0 0 2 0 0 25 50 75 100 125 REVERSE VOLTAGE : VR (V) AMBIENT TEMPERATURE : Ta (°C) Fig. 3 Capacitance between terminals characteristics Fig. 4 Derating curve (mounting on glass epoxy PCBs) http://www.weitron.com.tw WEITRON 3/3 16-Aug-07