WSD501H

WSD501H Surface Monut Schottky Barrier Diode Features: *Extremely Low VF . *Very Small Conduction Losses. *Schottky Barrier Diodes Encapsulated in SOD-323 Package. 1 2 SCHOTTKY BARRIER RECTIFIERS 100m AMPERES 40 VOLTS SOD-323 SOD-323 Outline Demensions Unit:mm Dim 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 0.25 0.40 D E 0.15 REF H 0.00 0.10 J 0.089 0.377 K 2.30 2.70 PIN 1.CATHODE 2.ANODE MILLMETERS Min Max WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Breakdown Voltage Continuous Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (8.3ms1/2 Sine Wave) Storage Temperature Symbol BV VR IO IFSM Tstg WSD 501H 45 40 100 1.0 -40 to+125 Unit Volts Volts mAmps Amps C ELECTRICAL CHARACTERISTICS (Ta=25 C) Characteristics Device Marking Maximum Instantneous Forward Voltage IF=100mA Maximum Instantneous Reverse Current (VR=10V) Typical Junction Capacitance (VR=10V, f=1MHz) VF Symbol WSD 501H JV 0.55 Unit Volts IR CJ 30 20 µAmps Pf WEITRON http://www.weitron.com.tw WSD501H Electrical characteristics curves (Ta=25 C unless specified otherwise) 1000 10m FORWARD CURRENT :IF (mA) 125 C 100 REVERSE CURRENT: I R (A) 1m 100µ 10µ 1µ 0.1 75 C C 25 C C 5 10 1 75 -25 25 C 12 C 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 FORWARD VOLTAGE:VF (V) REVERSE VOLTAGE:VR (V) FIG: 1 Forward characteristics CAPACITANCE BETWEEN TERMINALS :CT (pF) Fig.2 Reverse characteristics 100 100 Io CURRENT (%) 80 60 40 20 0 10 0 25 50 75 100 125 1 0 5 AMBIENT TEMPERATURE : Ta ( C) 10 15 20 25 30 35 REVERSE VOLTASGE : VR (V) Fig. 4 Derating curve (mounting on glass epoxy PCBs) Fig.3 Capacitance between terminals characteristics WEITRON http://www.weitron.com.tw