WSD520S

WSD520S/521S Surface Mount Schottky Barrier Diodes P b Lead(Pb)-Free Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS 1 2 Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited. SOD-523 SOD-523 Outline Dimensions Unit:mm S O D -5 2 3 D im A B C D E J K Min 1. 10 0. 70 0. 50 0. 25 0. 15 0. 07 1. 50 Ma x 1. 30 0. 90 0. 70 0. 35 0. 25 0. 20 1. 70 P IN 1. C A T H O D E 2. A N O D E WEITRON http://www.weitron.com.tw 1/4 Rev.A 21-Jul-05 WSD520S/521S Maximum Ratings Characteristic Reverse Voltage Average Rectifier Forward Current (1) Peak Forward Surge Current Operating Junction Temperature Range Storage Temperature Range (Ta=25 C Unless otherwise noted) Symbol VR IF(AV) IFSM TJ Tstg Value 30 200 1.0 125 -40 to +125 Unit Volts mA A C C Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)R VF Min 30 Max Unit Volts Reverse Breakdown Voltage (IR=100µA) Forward Voltage IF=200mA WSD520S WSD521S Reverse Leakage WSD520S VR=10V WSD521S NOTE: 1. 60HZ for 1 0.60 0.50 1.0 30.0 Volts IR µAdc Device Marking Item WSD520S WSD521S Marking B , 5J C , 5M Eqivalent Circuit diagram 1 2 WEITRON http://www.weitron.com.tw 2/4 Rev.A 21-Jul-05 WSD520S/521S Electrical characteristic curves (Ta=25 C) WSD520S 1 80 60 40 20 0 F OR W AR D C UR R E NT : I F ( A) 100 100m 10m Io C UR R E NT (%) C 12 75 1m 1 00 10 1 5 C 25 C 0.3 Ta 0 25 50 75 100 125 0 0.1 0.2 25 0.4 C 0.5 0.6 0.7 AMB IE NT T E MP E R AT UR E : T a (û ) C F OR W AR D V O LTAG E : V F ( V ) F ig 1. Derating curve (mounting on glas s epoxy P C B s ) F ig. 2 F orward characteris tics WSD520S C AP AC ITANC E BE TWE E N TE R MINALS : C T ( pF) 1m 1 00 10 1 25 C 100n 25 C 10n 1n Ta=125 C WSD520S 100 f=1 MHz R E VE R S E C UR R E NT : I R ( A) 75 C 10 0 10 20 30 1 0 10 20 30 R E V E R S E V O LTA G E : V R ( V ) R E V E R S E V O LT AG E : V R ( V ) F ig. 3 R evers e characteris tics F ig. 4 C apacitance between terminals characteris tics WEITRON http://www.weitron.com.tw 3/4 Rev.A 21-Jul-05 WSD520S/521S WSD521S 1 100m 10m 1m 1 00 10 1 25 C 100n 25 C 10n 1n Ta=125 C WSD521S R E VE R S E C UR R E NT : I R ( A) F OR W AR D C UR R E NT : I F ( A) 75 C C 12 75 1m 1 00 10 1 5 C 25 C 0.3 Ta 0 0.1 0.2 25 0.4 C 0.5 0.6 0.7 0 10 20 30 F OR W AR D V O LTAG E : V F ( V ) R E V E R S E V O LTAG E : V R ( V ) F ig. 5 F orward characteris tics F ig. 6 R evers e characteris tics WSD521S C AP AC ITANC E B E TWE E N TE R MINALS : C T ( pF ) 100 f=1 MHz 10 1 0 10 20 30 R E V E R S E V OLT AG E : V R ( V ) F ig. 7 C apacitance between terminals characteris tics WEITRON http://www.weitron.com.tw 4/4 Rev.A 21-Jul-05