WSD520S/521S
Surface Mount Schottky Barrier Diodes
P b Lead(Pb)-Free
Feature:
*Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package
SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS
1 2
Description:
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited.
SOD-523
SOD-523 Outline Dimensions
A C HE
VM A
Unit:mm
D
A
0
0.5 scale
1mm
Eb p
DIMENSIONS (mm are the original dimensions)
UNIT mm max min A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 V 0.15
Note1. The marking bar indicates the cathode.
OUTLINE VERSION SOD-523 REFERENCES IEC JEDEC EI A J SC- 7 9 EUROPEAN PROJECTION
ISSUE DATE 98 - 11- 2 5
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1/4
Rev.C 15-Jan-07
WSD520S/521S
Maximum Ratings (TA=25°C Unless otherwise noted)
Characteristic Reverse Voltage Average Rectifier Forward Current Peak Forward Surge Current (1) Operating Junction Temperature Range Storage Temperature Range Symbol VR IF(AV) IFSM TJ Tstg Value 30 200 1.0 125 -40 to +125 Unit V mA A °C °C
Electrical Characteristics (TA=25°C Unless otherwise noted)
Characteristic Reverse Breakdown Voltage IR = 100µA Forward Voltage IF = 200mA Reverse Leakage VR = 10V NOTE: 1. 60HZ for 1 WSD520S WSD521S WSD520S WSD521S Symbol V(BR)R Min 30 Max 0.60 0.50 1.0 30 Unit V
VF
-
V
IR
-
µA
Device Marking
Item WSD520S WSD521S Marking B C Eqivalent Circuitdiagram
1 2
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2/4
Rev.D 01-Oct-08
WSD520S/521S
Electrical characteristic curves(Ta=25ºC) WSD520S WSD520S
Ta=125oC
1 100m
FORWARD CURRENT:IF(A)
1m 100
REVERSE CURRENT : I (A) R
10m
10 1
75oC
Ta =1 2
-25 o C
1m 100 10 1
5C 75 o C 25 o C
o
25oC -25oC 10n 1n
100n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
FORWARD VOLTAGE : VF(V)
REVERSE VOLTAGE: VR(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
CAPACITANCE BETWEEN TERMINALS : CT(pF)
WSD520S
f=1MHz
100 80 60 40 20
WSD520S
10
1 0
Io CURRENT (%)
10
20
30
0 0
25
50
75
100
o
125
REVERSE VOLTAGE : VR(V)
AMBIENT TEMPERATURE : Ta ( C)
Fig. 3 Capacitance between terminals characteristics
Fig 4. Derating curve (mounting on glass epoxy PCBs)
WEITRON
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3/4
Rev.C 15-Jan-07
WSD520S/521S
Electrical characteristic curves(Ta=25ºC)
1 100m
FORWARD CURRENT : I F (A)
WSD521S
REVERSE CURRENT : I R (A)
10m 1m
WSD521S
Ta=125oC 75oC
Ta =1 25 o C 75 o C 25 o C
10m 1m
100 10 1 -25 oC 25oC
100 10 1
-25 o C
100n 10n
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
Fig. 1 Forward characteristics
FORWARD VOLTAGE:VF(V)
REVERSE VOLTAGE:VR(V)
Fig. 2 Reverse characteristics
100
CAPACITANCE BETWEEN TERMINALS : CT(pF)
WSD521S
Ta=25 f=1MHz
oC
WSD521S
100
Io CURRENT (%)
50
20 10 5
80 60 40 20 0 0
2 1 0 2 4 6 8 10 12 14
25
50
75
100
125
Fig. 3 Capacitance between terminals characteristics
REVERSE VOLTAGE : VR(V)
AMBIENT TEMPERATURE : Ta(oC)
Fig. 4 Derating curve (mounting on glass epoxy PCBs)
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Rev.C 15-Jan-07
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