WSD751G
Surface Mount Schottky Barrier Diodes
P b Lead(Pb)-Free
Feature:
* Extrmely High Switching Speed. * Low Forward Voltage and Low Reverse Current. * High Reliability. * Schottky Barrier Diodes Encapsulated in a SOD-723 Package.
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
1 2
Description:
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited.
SOD-723
SOD-723 Outline Dimensions
Dim A B C D E J K
SOD-723
Min 0.95 0.55 0.45 0.24 0.15 0.10 1.35
Max 1.05 0.65 0.55 0.30 0.25 0.16 1.45
PIN 1. CATHODE 2. ANODE
WEITRON
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Rev.A 03-Aug-09
WSD751G
Maximum Ratings (TA=25˚C Unless otherwise noted)
Characteristic Peak Reverse Voltage DC Reverse Voltage Average Recti er Forward Current Peak Forward Surge Current
(1)
Symbol VRM VR IO IFSM RθJA PD TJ Tstg
Value 40 30 30 200 600 150 125 -40 to +125
Unit V V mA mA °C/W mW ˚C ˚C
Thermal Resistance, Junction to Ambient Power Dissipation Operation Junction Temperature Range Storage Temperature Range Note.1 : 60Hz, 1cyc
Electrical Characteristics
Characteristic Forward Voltage IF=1.0mA Reverse Leakage VR=30V Capacitance Between Terminals VR=1.0V, f=1MHz
(TA=25˚C Unless otherwise noted) Symbol VF IR CT Min Typ Max 0.37 0.5 Unit V µA
-
-
2.0
pF
Device Marking
Item WSD751G Marking 5 Eqivalent Circuit diagram
1 2
WEITRON
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Rev.A 03-Aug-09
WSD751G
Electrical Characteristic Curves
1000m 100m
FORWARD CURRENT : IF ( A)
° (TA=25°C)
Typ. pulse measurement
100µ
TA=125°C TA=75°C
10µ
REVERSE CURRENT : IR (A)
10m 1m
TA=125°C TA=75°C
1µ TA=25°C 100n TA= -25°C
100µ 10µ 1µ
TA=25°C TA= -25°C
10n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1n
0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
FIG.1 Forward Characteristics
FIG.2 Reverse Characteristics
100 TA = 25°C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
50
f = 1MHz
20 10 5
2 1
0
2
4
6
8
10
12
14
REVERSE VOLTAGE : VR (V)
FIG.3 Capacitance Between Terminals Characteristics
WEITRON
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Rev.A 03-Aug-09
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