WSD751H

WSD751H 1 2 SOD-323 WEITRON http://www.weitron.com.tw WSD751H MAXIMUM RATING Characteristics Breakdown Voltage Continuous Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (8.3ms1/2 Sine Wave) Storage Temperature Symbol BV VR IO IFSM Tstg WSD 751H 40 30 30 200 -40 to+125 Unit Volts Volts mAmps mAmps C ELECTRICAL CHARACTERISTICS (Ta=25 C) Characteristics Device Marking Maximum Instantneous Forward Voltage IF=1mA Maximum Instantneous Reverse Current (VR=30V) Typical Junction Capacitance (VR=10V, f=1MHz) VF Symbol WSD 751H JV 0.37 Unit Volts IR CJ 0.5 20 µAmps PF WEITRON http://www.weitron.com.tw WSD751H Electrical Characteristic Curves (Ta=25 C Unless Specified Otherwise) 1000m Typ. pulse measurement 100µ Ta=125 C Ta=75 C FORWARD CURRENT:IF (A) Ta =1 25 10m 1m 100µ 10µ 1µ REVERSE CURRENT:IR(A) 100m C 10µ 1µ Ta=75 C Ta=25 C 100n Ta=25 C Ta= -25 C 10n Ta=-25 C Typ. pulse measurement 0 0.2 0.40 0.6 0.8 1.0 1.2 1.4 1n 0 5 10 15 20 25 30 35 Fig 1.Forward Characteristics CAPACITANCE BETWEEN TERMINAL CT(pF) 100 50 20 10 5 FORWARD VOLTAGE :VF (V) FIG 2. Reverse Characteristics Ta=25 C f=1MHz REVERSE VOLTAGE: VR(V) 2 1 0 2 4 6 8 10 12 REVERSE VOLTAGE:VR(V) 14 FIG. 3 Capacitance Between Terminal Chacteristics WEITRON http://www.weitron.com.tw