WSD751S

WSD751S Surface Mount Schottky Barrier Diodes P b Lead(Pb)-Free Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS 1 2 Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited. SOD-523 SOD-523 Outline Dimensions S O D -5 2 3 D im A B C D E J K Min 1. 10 0. 70 0. 50 0. 25 0. 15 0. 07 1. 50 Ma x 1. 30 0. 90 0. 70 0. 35 0. 25 0. 20 1. 70 P IN 1. C A T H O D E 2. A N O D E WEITRON http://www.weitron.com.tw WSD751S Maximum Ratings Characteristic Peak Reverse Voltage DC Reverse Voltage Average Rectifier Forward Current Peak Forward Surge Current (1) Operating Junction Temperature Range Storage Temperature Range ( Ta=25 C Unless otherwise noted) Symbol VRM VR IF(AV) IFSM TJ Tstg Value 40 30 30 200 -40 to +125 Unit Volts Volts mA mA C Electrical Characteristics Characteristic ( TA=25 C Unless otherwise noted) Symbol V(BR)R VF IR CT Min 30 TYP Max Unit Volts Reverse Breakdown Voltage (IR=100µA) Forward Voltage IF=1.0mA Reverse Leakage VR=30V Capacitance Between Terminals VR=1V, f=MHZ NOTE: 1. 60HZ for 1 0.37 0.5 2.0 Volts µAdc PF Device Marking Item WSD751S Marking 5 Eqivalent Circuit diagram 1 2 WEITRON http://www.weitron.com.tw WSD751S Electrical characteristic curves (Ta = 25°C unless specified otherwise) 1 000m 100m 10m 1m 1 00 10 1 T yp. puls e meas urement 100 T a = 125 û C T a = 75 û C F OR WAR D C UR R E NT : I F ( A) R E VE R S E C UR R E NT : I R ( A) 10 ûC =1 T a = 75 û C 1 T a = 25 û C 100n T a = -25 û C T yp. puls e meas urement 5 10 15 20 25 30 35 R E V E R S E V O L T AG E : V R ( V ) Ta 25 T a = 25 û C T a = -25 û C 10n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1n 0 F O R W AR D V O L T AG E : V F ( V ) F ig. 1 F orward characteris tics F ig. 2 R evers e characteris tics C AP AC ITANC E B E TWE E N TE R MINALS : C T ( pF ) 100 50 T a = 25 û C f = 1MHz 20 10 5 2 1 0 2 4 6 8 10 12 14 R E V E R S E V OLT AG E : V R ( V ) F ig. 3 C apacitance between terminals characteris tics WEITRON http://www.weitron.com.tw