WT-Z206V-AU4

WT-Z206V-AU4 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application 1-2 This specification applies to N/P/N-Type silicon Zener diode chip( Vertical) Device NO:W T-Z206V-AU4 2. Structure: 2-1. Planar type : Silicon Diode. 2-2. Electrodes : Top side : Gold pad(Cathode). Back side : Gold Layer(Cathode). 3-1. *Chip size : 6.88 mils x 6.88 mils (175 µm x 175 µm ). 3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15 µm ). 3-3. Bonding pad : 4.5 mils x 4.5 mils (115 µm x 115 µm) . 3-4. Pattern drawing : Refer to the attached drawing. *Including scribing line. The chip size is about 5.9mil(0.150mm) after dicing. 3. Size: 4. Electrical Characteristics (Ta=25 C) Parameter Zener Voltage Forward Voltage Leakage Current Electrostatic Discharge Symbol Vz (Top) Vz (Back) Vf Condition Iz =5mA Min. 5.3 5.5 Typ. Max. 6.8 7.0 1.2 Unit V IF =20mA V IR V=4V HBM MIL-STD 883 - - 100 nA ESD 8.0 - - KV Note: 1. Parallel with one LED 2. Single pad (one wire bonding applied only) 3. Double direction Zener diode protection 5. Drawing: Bonding pad Top side N P N 6. Protection Circuit: ( Top View) LED Protection Zener Back Side Bonding pad WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 06 - Jan - 06