WT-Z210P

WT-Z210P Zener Diode Chips (Dual Pad) for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to P-Type silicon Zener diode chip (Dual pad) Device NO:WT-Z210P 2. Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy(Anode). Back side:Gold Layer(Cathode). 3. Size: 3-2 Chip thickness: 6.0 +1.0 mils (152 + 25.4 um). I I 7.3 mils I I 7.3 mils I I 2 (1/2 I I 186 um I I186 um I I 2). 3-3 Active area: 1/2 3-4 Dual Bonding pad: 1/2 I I 6.8 mils I I 6.8 mils I I 2 (1/2 I I 173 um I I 173 um I I 2). Hight of Hypotenuse: 5.23 mils(133 um). 3-5 Pattern drawing: Refer to the attached drawing. 3-1 Chip size: 11.0 mils I I 11.0 mils (280 um I I 280 um). 4. Electrical Characteristics (Ta=25 C) Parameter Zener Voltage Forward Voltage Reverse Leakage IR Current Electrostatic ESD Discharge Symbol Condition Min. Typ. Max. Unit Vz Iz=5mA 5.8 6.3 6.8 V Vf IF=20mA VR=4V VR=5V HBM 8.0 MIL-STD 883 1.2 100 V nA 500 KV 5. Drawing: Top side (Dual Bonding pad) (Top View) 6. Protection Circuit: P P LED Protection Zener N -sub LED Back side Dual Bonding pad WEITRON TECHNOLOGY CO., LTD. Bonding pad TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw 8 - July - 04