WT-Z210V-AU4
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to N/P/N-Type silicon Zener diode chip (Dual pad/Vertical) Device NO:WT-Z210V-AU4
2. Structure:
2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side : Gold Pad.(Cathode) Back side : Gold Layer.(Anode)
3. Size:
3-1 Chip size: 10.0 mils x 10.0 mils (254 um x 254 um). 3-2 Chip thickness: 4.0 ± 1.0 mils (100 ± 25.4 um). 3-3 Dual Bonding pad: 7.7 mils x 7.7mils (195um x 195um). 3-4 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25 C)
Parameter Zener Voltage Forward Voltage Reverse Leakage Current Electrostatic Discharge Symbol Vz (Top) Vz (Back) Vf Condition Iz=5mA Min. 5.8 5.4 Typ. Max. 7.0 6.6 1.2 Unit V
IF=20mA
V
IR
VR=4V HBM MIL-STD 883
100
nA
ESD
8.0
KV
5. Drawing:
Bonding pad Top side
N P-Sub N
6. Protection Circuit:
( Top View)
LED
Protection Zener
Back Side
Bonding pad
WEITRON TECHNOLOGY CO., LTD.
Bonding pad
TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw
30 - Jun - 06
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