WT-Z224V-AU4
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
1. Feature:
1-1 This specification applies to N/P/N silicon zener double diodes chips, Device NO. WT-Z224V-AU4
2. Structure:
2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Gold pad. Back side : Gold Layer.
3. Size:
3-1. Chip size : 24 mils x 24 mils (609.6 m x 609.6 m). 3-2. Chip thickness :7.87 ± 1.0 mils (200 ± 2.54 m). 3-3. Bonding pad : 19.3 mils x 19.3 mils (490 m x 490 m) . 3-4. Pattern drawing : Refer to the attached drawing.
* Including scribing line. The chip size is about 23mil(585 m) after dicing.
4. Electrical Characteristics (TA=25˚C)
Parameter Symbol Idf Leakage Current Idr Condition
V=4V H=0mW/cm2 V=5V H=0mW/cm2 V=4V H=0mW/cm2 V=5V H=0mW/cm2 Izf=5mA H=0mW/cm2 Izf=5mA H=0mW/cm2
Min.
Typ.
Max.
Unit nA µA nA µA
5.5 5.3 -
-
100 0.5 100 0.5 7.0
Vz(forward)
Zener Voltage
V 6.8
750 mA KV
Vz(reverse)
Maximum Zener Current Electrostatic Discharge IZM ESD
HBM MIL-STD883
8.0
-
5. Annotation :
5-1. Parallel with one LED 5-2. Single pad (one wire bonding applied only) 5-3. Double direction Zener diode protection
6. Drawing:
Bonding pad ( Top View) Top side
N P N
7. Protection Circuit:
LED
PROTECTION ZENER
Back Side
Bonding pad
WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw
Rev.A 08-Mar-07
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