WTC2306_09

WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.8 30 1.4 140 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Marking WTC2306 = N06 WEITRON http://www.weitron.com.tw 1/4 Rev.B 17-Aug-09 WTC2306 Electrical Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=250µA Gate-Source Threshold Voltage VDS=VGS, ID=250µA Gate-Source Leakage Current + VDS=0V, VGS=-12V Zero Gate Voltage Drain Current VDS=24V , VGS=0V Drain-Source On-Resistance VGS=2.5V , ID=4.0A VGS=4.5V , ID=5.0A VGS=10V , ID=5.8A Gate Resistance VGS=0V, VDS=0V, f=1HMz Forward Transconductance VDS=5V, ID=5A V(BR)DSS VGS (th) IGSS IDSS 30 0.7 - - 1.4 ±100 1 V V nA µA R DS(on) 6 10 45 34 31 7 15 62 43 38 7.5 - m Rg gfs S Switching Turn-On Delay Time(2) VDD=15V, ID=1A, VGEN=10V, RG=3 , RL=2.7 Rise Time VDD=15V, ID=1A, VGEN=10V, RG=3 , RL=2.7 Turn-O Time VDD=15V, ID=1A, VGEN=10V, RG=3 , RL=2.7 Fall Time VDD=15V, ID=1A, VGEN=10V, RG=3 , RL=2.7 Total Gate Charge(2) VDS=15V, ID=5.8A,VGS=4.5V Gate-Source Charge VDS=15V, ID=5.8A,VGS=4.5V Gate-Drain Charge VDS=15V, ID=5.8A,VGS=4.5V Drain-Source Diode Forward Voltage(2) VGS=0V, IS=1.0A Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300µs, duty cycle ≤ 2%. t tf Qg Qgs Qgd td(on) tr ) - 7 15 38 3 11 1.6 2.8 - 14 30 76 6 14.3 2.08 3.64 1.2 2.5 nS nS nS nS nc nc nc V A VSD IS - WEITRON http://www.weitron.com.tw 2/4 Rev.B 17-Aug-09 WTC2306 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 Rev.B 17-Aug-09 WTC2306 SOT-23 Outline Dimension SOT-23 A TOP VIEW B C D E G H K L J M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 Rev.B 17-Aug-09