WTC9435

WTC9435 P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT -5.3 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 100mΩ @ VGS = -4.5V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) (TA=75°C) Maximum Junction-Case Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJC RθJA TJ Tstg Value -30 ±20 -5.3 -20 2.5 1.2 24 62.5 -55~+150 -55~+150 Unit V V A A W °C/W °C/W °C °C Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Marking WTC9435 = P94 WEITRON http://www.weitron.com.tw 1/4 17-Aug-09 WTC9435 Electrical Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=-250µA Gate-Source Threshold Voltage VDS=VGS, ID=-250µA Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-4.5V, ID=-4.2A VGS=-10V , ID=-5.3A Forward Transconductance VDS=-10V, ID=-5.3A V(BR)DSS VGS (th) IGSS IDSS -30 -1.0 -1.7 -3.0 + -100 -1 V V nA µA - R DS(on) gfs 70 50 10 100 70 m S - Dynamic Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 745 440 120 PF Switching Turn-On Delay Time(2) VDD=-15V, ID=-1A, VGEN=-10V, RG=6 , RL=15 Rise Time VDD=-15V, ID=-1A, VGEN=-10V, RG=6 , RL=15 Turn-O Time VDD=-15V, ID=-1A, VGEN=-10V, RG=6 , RL=15 Fall Time VDD=-15V, ID=-1A, VGEN=-10V, RG=6 , RL=15 Total Gate Charge(2) VDS=-15V, ID=-5.3A,VGS=-10V Gate-Source Charge VDS=-15V, ID=-5.3A,VGS=-10V Gate-Drain Charge VDS=-15V, ID=-5.3A,VGS=-10V Drain-Source Diode Forward Voltage(2) VGS=0V, IS=-2.6A Continuous Source Current (Body Diode) t tf Qg Qgs Qgd td(on) tr ) - 9 15 75 40 28 3 7 - - nS nS nS nS nc nc nc V A - -1.3 -2.6 VSD IS Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad. WEITRON http://www.weitron.com.tw 2/4 17-Aug-09 WTC9435 TYPICAL ELECTRICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/4 17-Aug-09 WTC9435 SOT-23 Outline Dimension SOT-23 A TOP VIEW B C D E G H K L J M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 17-Aug-09