WTK6680

WTK6680 Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 11.5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D 1 2 3 4 S S S G 8 7 6 5 D D D Description: The WTK6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 1 The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 Features: *Low On-Resistance *High Vgs Max Rating Voltage *Surf ace Mount Package A b s o l u t e Max i m u m Rat i n g s Par am et er Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Sy m b o l VD S V GS ID @TA=25 ID @TA=70 ID M PD @TA=25 Tj, Tstg Rat i n g s 30 ±20 11.5 9.5 50 2.5 0.02 -55 ~ +150 Un i t V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Tem perature Range Device Marking WTK6680 = 6680SC WEITRON http://www.weitron.com.tw 1/6 15-Aug-08 WTK6680 Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 30 1.0 - Typ. 0.02 30 16.8 4.2 8 8.9 7.3 25.6 18.6 1450 285 180 Max. 3.0 ±100 1 25 11 18 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=15V, ID=11.5A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=11.5A VGS=4.5V, ID=9.5A ID=11.5A VDS=15V VGS=5V VDS=15V ID=1A VGS=10V RG=5.5 RD=10 VGS=0V VDS=25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS Min. - Typ. - Max. 1.3 1.92 Unit V A Test Conditions IS=3.5A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.3V Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad. http://www.weitron.com.tw WEITRON 2/6 15-Aug-08 WTK6680 W E IT R O N WEITRON http://www.weitron.com.tw 3/6 15-Aug-08 WTK6680 Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode http://www.weitron.com.tw Fig 12. Gate Threshold Voltage v.s. Junction Temperature 4/6 15-Aug-08 WEITRON WTK6680 Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform http://www.weitron.com.tw WEITRON 5/6 15-Aug-08 WTK6680 SO-8 Package Outline Dimensions Unit:mm 1 L θ E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L θ 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 WEITRON http://www.weitron.com.tw 6/6 15-Aug-08