WTL2602

WTL2602 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 3 GATE 1,2,5,6 DRAIN DRAIN CURRENT 6.3 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 34mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 4 SOURCE 1 6 5 4 2 3 SOT-26 Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V, TA=25˚C TA=70˚C Pulsed Drain Current1,2 Total Power Dissipation(TA=25˚C) Maximum Junction-ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ,Tstg Value 20 ±12 6.3 5 30 2 62.5 -55~+150 W ˚C/W ˚C A Unit V Device Marking WTL2602=2602 http:www.weitron.com.tw WEITRON 1/6 08-Sep-05 WTL2602 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250 μA Gate-Source Threshold Voltage VDS=VGS,ID=250 μA Gate-Source Leakage current VGS=±12V Drain-SourceLeakage Current(Tj=25˚C) VDS=20V,VGS=0 Drain-SourceLeakage Current(Tj=55˚C) VDS=16V,VGS=0 Drain-SourceOn-Resistance VGS=10V,I D=5.5A VGS=4.5V,I D=5.3A VGS=2.5V,ID=2.6A VGS=1.8V,I D=1.0A Forward Transconductance VDS=5V,I D=5.3A BVDSS VGS(Th) IGSS 20 0.5 IDSS 10 V ±100 1 μA nA RDS(on) - 13 30 34 50 90 - mΩ gfs S Dynamic Input Capacitance VGS=0V,VDS=15V,f=1.0MHz Output Capacitance VGS=0V,VDS=15V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=15V,f=1.0MHz Ciss Coss Crss 603 144 111 1085 pF http:www.weitron.com.tw WEITRON 2/6 08-Sep-05 WTL2602 Switching Turn-on Delay Time2 VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω Rise Time VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω Turn-off Delay Time VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω Fall Time VDS=15V, VGS=10V, ID=1A, RD=15Ω, RG=2Ω Total Gate Charge2 VDS=10V,VGS=4.5V,I D=5.3A G ate-Source Cha rge VDS=10V,VGS=4.5V,I D=5.3A G ate-Source Change VDS=10V,VGS=4.5V,I D=5.3A td(on) tr td(off) tf Qg Qgs Qgd 6 14 18.4 2.8 8.7 1.5 3.6 ns 16 nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=1.2A Reverse Recovery Time VGS=0V,IS=5A,dl/dt=100A/µs Reverse Recovery Charge VGS=0V,IS=5A,dl/dt=100A/µs VSD T rr Q rr 16.8 11 1.2 V ns nC Note: 1. Pulse width limited by max. junction temperature. 2. Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 156˚C/W when mounted on Min. copper pad. http:www.weitron.com.tw WEITRON 3/6 08-Sep-05 WTL2602 80 TA =25°C 60 5.0V 4.5V 4.0V 50 TA =150°C 40 5.0V 4.5V 4.0V ID ,DRAIN CURRENT (A) ID ,Drain Current (A) 40 VG=2.5V 30 20 20 10 VG=2.5V 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 FIG.1 Typical Output Characteristics 100 1.8 VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics VDS ,Drain-to-source Voltage(V) 80 I D = 1.0A TA = 25°C Normalized RDs(on) 1.6 1.4 1.2 1.0 0.8 I D = 5.3A VG = 4.5V RDs(on) (mΩ) 60 40 20 1 2 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 Fig.3 On-Resistance v.s. Gate Voltage 10 1.6 1.4 1.2 VGS ,Gate-to-source Voltage(V) Fig.4 Normalized OnResistance Tj ,Junction Temperature(°C) I S ( A) Tj = 150°C Tj = 25°C VGS(th) (V) 1.0 1.0 0.8 0.6 0.4 0.1 0.01 0 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) 0.4 0.8 1.2 1.6 0.2 -50 Tj ,Junction Temperature(°C) 0 50 100 150 Fig.6 Gate Threshold Voltage v.s. Junction Temperature WEITRON http://www.weitron.com.tw 4/6 08-Sep-05 WTL2602 14 1000 f = 1.0MHz VGS , Gate to Source Voltage(V) 12 10 8 6 4 2 0 I D = 5.3A VDS = 16V Ciss Coss C(pF) 100 Crss 0 5 10 15 20 25 0 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 QG , Total Gate Charge(nC) VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 10 Normalized Thermal Response(R ja) θ 1ms 0.1 0.1 0.05 PDM ID(A) 1 10ms 100ms 0.01 0.01 t T 0.1 TA = 25°C Single Pulse 0.01 0.1 1 10 Is DC 100 Duty factor = t / T Peak Tj=PDM x Rθja + Tu Rθja=156°C / W Single pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Fig 9. Maximum Safe Operation Area VDS 90% VDS , Drain-to-Source Voltage(V) t, Pulse Width(s) Fig 10. Effective Transient Thermal Impedance VG QG QGS QGD 4.5V 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 08-Sep-05 WTL2602 SOT-26 Outline Dimension A G Unit:mm SOT-26 Dim A B C D E F F1 G H I J K L Min 2.70 2.60 1.40 0.30 0.00 0˚ 0.08 Max 3.10 3.00 1.80 0.55 0.10 10˚ 0.25 Top View B C L Front View H F1 F J Side View K D 1.90 REF 1.20 REF 0.12 REF 0.37 REF 0.60 REF 0.95 REF WEITRON http://www.weitron.com.tw E 6/6 I 08-Sep-05