WTM1624
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Des c r i p t i o n
The WTM1624 applies to voltage regulators, relay drivers,lamp drivers,and electrical equipment.
SOT-89
F eat u r es
Adoption of FBET, MBIT processes Low collector-to-emitter saturation v oltage Fast switching speed Large current capacity and wide ASO
A b s o l u t e Max i m u m Rat i n g s at TA = 25
Par am et er Junction Tem perature Storage Tem perature Collector to Base Voltage Collector to Emitter Voltage Em itter to Base Voltage Collector Current (DC) Collector Current (Pulse) (Note1) Total Power Dissipation
N ote 1: Single puls e, PW =10ms
Sym b ol Tj Tstg VCBO VCEO VEBO IC I CP PD
Rat i n gs +150 -55~+150 60 50 6 3 6 0.5
Un i t
V V V A A W
El ec t r i c al Ch ar ac t er i s t i c s
Sym b ol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob tstg tf Mi n . 60 50 6 100 -
(Ta = 25 , unless otherwise stated) Typ . Max. Un i t Tes t Co n di t i o n s V IC=10uA , IE=0 V IC=1mA, IB=0 V IE=10uA ,IC=0 1 uA VCB=40V, IE=0 1 uA VEB=4V, IC=0 0.19 0.5 V IC=2A, IB=100m A 0.94 1.2 V IC=2A, IB=100m A 560 VCE=2V, IC=100mA 150 MHz VCE=10V, IC=50mA 25 pF VCB=10V, IE=0, f=1MHz 650 ns See test circuit 35 ns
*Meas ur ed under puls e c ondition. Puls e widthfi 380fl s, D uty C yc lefi 2%
Cl as s i f i c at i o n o f h FE
Ran k Ran g e R 100 - 200 S 140 - 280 T 200 - 400 U 280 - 560
WEITRON
http://www.weitron.com.tw
1/4
28-Dec-07
WTM1624
Tes t Ci r c u i t (Un i t : r es i s tan c e: , c ap ac i tan c e: F)
Ch ar ac t er i s t i c s Cu r v e
WEITRON
http://www.weitron.com.tw
2/4
28-Dec-07
WTM1624
WEITRON
http://www.weitron.com.tw
3/4
28-Dec-07
WTM1624
SOT-89 Outline Dimensions
unit:mm
SOT-89
E G
Dim
A
J
C
H
K L
B
D
A B C D E G H J K L
Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900
WEITRON
http://www.weitron.com.tw
4/4
28-Dec-07
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