WTM1766

WTM1766 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 40 32 5.0 2.0 500 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=3V, IC=500mA IC=2A, IB=0.2A VCE=5V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz 100 30 82 conditions MIN 40 32 5 1 1 390 0.8 V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range Marking hFE(1) P 82-180 DBP Q 120-270 DBQ R 180-390 DBR WEITRON http://www.weitron.com.tw 1/3 04-Dec-08 WTM1766 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 04-Dec-08 WTM1766 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw 3/3 04-Dec-08