WTM1797

WTM1797 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free FEATURES 1. BASE 2. COLLECTOR 3. EMITTER 1 2 * Low saturation voltage * Excellent DC current gain characteristics * Complements to 2SC4672 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value -50 -50 -6 -2 500 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=-50? A, IE=0 IC=-1mA, IB=0 IE=-50? A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA IC=-1A, IB=-50mA VCE=-2V, IC=-0.5A, f=100MHz VCB=-10V, IE=0, f=1MHz conditions MIN -50 -50 -6 TYP MAX UNIT V V V ?A ?A 200 36 -0.1 -0.1 270 -0.35 82 - V MHz pF - CLASSIFICATION OF Rank Range Marking hFE P 82-180 AGP Q 120-270 AGQ WEITRON http://www.weitron.com.tw 1/3 14-Oct-08 WTM1797 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 14-Oct-08 WTM1797 SOT-89 Outline Dimensions unit:mm SOT-89 E G Dim A J C H K L B D A B C D E G H J K L Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw 3/3 14-Oct-08