WTM2310A

WTM2310A N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.0 AMPERES DRAIN SOUCE VOLTAGE 60 VOLTAGE 2 SOURCE Features: * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE 2. DRAIN 3. SOURCE SOT-89 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation (T A =2 5°C ) Maximum Junction-Ambient 3 Operating Junction Temperature Range Storage Temperature Range Note 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on FR4 board, t ≤10sec. TA=25°C TA=70°C Symbol VDS VG S ID ID M PD R θJA TJ Tstg Value 60 ±20 5.0 4.0 10 1.50 83.3 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Device Marking WTM2310A = 2310A WEITRON http://www.weitron.com.tw 1/5 04-Feb-10 WTM2310A Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 60 0.5 - Typ. 12 4.0 1.2 1.0 6 12 18 10 320 42 20 Max. 1.5 ±100 1 10 115 125 - Unit V V S nA uA uA mŁ Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=15V, ID=4A VGS= ±20V VDS=60V, VGS=0 VDS=60V, VGS=0 VGS=10V, ID=5.0A VGS=4.5V, ID=4.5A ID=4A VDS=30V VGS=4.5V VDD=30V ID=2.5A VGS=10V RG=6 Ł RL=12 Ł VGS=0V VDS=30V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Rev erse Transf er Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Symbol VSD Min. - Typ. - Max. 1.2 Unit V Test Conditions IS=2.5A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 10sec. 3. Surf ace mounted on FR4 board, t WEITRON http://www.weitron.com.tw 2/5 04-Feb-10 WTM2310A Characteristics Curve I D (A ) VDS (V) I D (A ) VGS (V) Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics RDS(ON) Normaliz ed RDS(ON) ( ) I D ( A) TJ ( : ) Fig 3. On-Resistance vs. Drain Current and Gate Voltage Fig 4. On-Resistance vs. Junction Temperature RDS(ON) ( ) VGS (V) I S (A ) VSD (V) Fig 5. On-Resistance vs. Gate-Source Voltage Fig 6. Body Diode Characteristics WEITRON http://www.weitron.com.tw 3/5 04-Feb-10 WTM2310A VDS (V) Power ( W) I D (A ) Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Maximum Power Dissipation Capacitance (pF) VGS (V) Qg (nC ) VDS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance WEITRON http://www.weitron.com.tw 4/5 04-Feb-10 WTM2310A SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 5/5 04-Feb-10