WTM5551

WTM5551 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 Features: * Switching and amplification in high Voltage Applications such as Telephony. * Low Current(Max. 600mA) * High Voltage(Max. 180V) 2 3 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otheerwise Noted) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C Thermal Resistance Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Value 180 160 6 0.6 0.5 104 +150 -65 to +150 Unit V V V A W ˚C/W ˚C ˚C WEITRON http://www.weitron.com.tw 1/4 18-Nov-05 WTM5551 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=10µA, IC=0 Collector Cut-Off Current VCB=120V, IE=0 Emitter-Cut-Off Current VEB=4V, IC=0 ON CHARACTERISTICS DC Current Gain VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, IC=50mA Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, IC=10mA, f=100MHz Output Capacitance VCB=10V, IE=0, f=1MHz Noise Figure VCE=5V, IC=0.2mA, f=10Hz to 15.7KHz, Rs=10Ω DEVICE MARKING Marking 1G6 fT Cob NF 100 300 6.0 8.0 MHz pF dB hFE(1) hFE(2) hFE(3) VCE(sat) 80 80 30 250 0.15 0.2 1.0 1.0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 180 160 6.0 Typ Max 50 50 Unit V V V nA nA V VBE(sat) V WEITRON http://www.weitron.com.tw 2/4 18-Nov-05 WTM5551 Typical Characteristic COLLECTOR CURRENT IC(mV) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 70µA 60µA 50µA 40µA 30µA 20µA 10µA TA=25°C 150 DC CURRENT GAIN : hFE 140 120 100 80 60 1 10 VCE=5V TA=25°C 100 40 45 Fig.1 Collector current vs. Collector-emitter voltage COLLECTOR-EMITTER VOLTAGE VCE(V) Fig.2 DC current gain vs. collector current COLLECTOR CURRENT : IC(A) 1.0 COLLECTOR-EMITTER VOLTAGE VCE(V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC=1.0mA 10mA 30mA 100mA Fig.3 Collector-emitter voltage vs. Base current BASE CURRENT : IB(mA) WEITRON http://www.weitron.com.tw 3/4 18-Nov-05 WTM5551 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 4/4 18-Nov-05