WTN9575

WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 2,4 DRAIN DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: * Super high dense cell design for low RDS(ON) RDS(ON) < 90m @ VGS = -10V * Simple Drive Requirement * Lower On-Resistance * Fast Switching 3 SOURCE 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 4 1 2 3 SOT-223 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@10V(TA=25°C) ,VGS@10V(TA=70°C) Pulsed Drain Current 1 Total Power Dissipation(T A=25°C) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value -60 ±25 -4.0 -3.2 -20 3.0 45 +150 -55 ~ +150 Unit V V A A W °C/W °C °C Device Marking WTN9575 = 9575 WEITRON http:www.weitron.com.tw 1/6 18-Jul-07 WTN9575 Electrical Characteristics (TA = 25°C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0, ID = -250µA Gate-Source Threshold Voltage VDS = VGS, ID = -250µA Gate-Source Leakage Current VGS = ± 25V Drain-Source Leakage Current(Tj=25°C) VDS = -60A, VGS = 0 Drain-Source Leakage Current(Tj=70°C) VDS = -48V, VGS = 0 Drain-Source On-Resistance2 VGS = -10A, ID = -4.0A VDS = -4.5A, ID = -3.0A Forward Transconductance VDS = -10A, ID = -4.0A V(BR)DSS VGS(Th) IGSS -60 -1.0 RDS(ON) gfs 7 -3.0 ±100 -1 -25 90 120 m S V V nA IDSS A Dynamic Input Capacitance VGS = 0V, VDS = -25V, f = 1.0MHz Output Capacitance VGS = 0V, VDS = -25V, f = 1.0MHz Reverse Transfer Capacitance VGS = 0V, VDS = -25V, f = 1.0MHz Ciss Coss Crss 1745 165 125 2790 pF http:www.weitron.com.tw WEITRON 2/6 18-Jul-07 WTN9575 Switching Turn-on Delay Time2 VDS=-30V,VGS=-10V,ID=-1A,R D=30 ,RG=3.3 Rise Time VDS=-30V,VGS=-10V,ID=-1A,R D=30 ,RG=3.3 Turn-o Delay Time VDS=-30V,VGS=-10V,ID=-1A,R D=30 ,RG=3.3 Fall Time VDS=-30V,VGS=-10V,ID=-1A,R D=30 ,RG=3.3 Total Gate Charge2 VDS=-48V,VGS=-4.5V,ID=-4.0A Gate-Source Charge VDS=-48V,VGS=-4.5V,ID=-4.0A Gate-Drain Change VDS=-48V,VGS=-4.5V,ID=-4.0A td(on) 12 5 68 32 18 5.0 7.0 ns 28 nC tr td(o ) tf Qg Qgs Qgd Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V, IS=-2.0A Reverse Recovery Time VGS=0V, IS=-4.0A, dl/dt=100A/ s Reverse Recovery Charge VGS=0V, IS=-4.0A, dl/dt=100A/ s VSD Trr Qrr 56 146 -1.2 V ns nC Note: 1. Pulse width limited by max, junction temperature. 2. Pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min, copper pad. WEITRON http://www.weitron.com.tw 3/6 18-Jul-07 WTN9575 Characteristics Curve WEITRON http://www.weitron.com.tw 4/6 18-Jul-07 WTN9575 Duty factor = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t T Single pulse Duty factor = t / T Peak Tj=P DM x R θ ju + Tu Rθ ja =135°C / W WEITRON http://www.weitron.com.tw 5/6 18-Jul-07 WTN9575 SOT-223 Outline Dimensions unit:mm A F DIM 4 S 1 2 3 B L D G C H M K J A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw 6/6 18-Jul-07